| About this Abstract |
| Meeting |
2010 TMS Annual Meeting & Exhibition
|
| Symposium
|
2010 Functional and Structural Nanomaterials: Fabrication, Properties, Applications and Implications
|
| Presentation Title |
Effects of Process Parameters of ALD on High-k Dielectric Deposition on HOPG for Graphene Based Nanoelectronics |
| Author(s) |
Greg Mordi, Bongki Lee, Jiyoung Kim |
| On-Site Speaker (Planned) |
Greg Mordi |
| Abstract Scope |
Graphene, a single layer of graphite with 2-D honeycomb structure, has been the center of attention as an emerging material for novel nanoelectronics, thanks to its unique electronic properties and potential applications. In order to realize high performance nanoelectronic devices, it is required to build localized gate structures on a graphene layer. Atomic layer deposition (ALD) is expected to be a suitable technique to deposit conformal thin high-k dielectric films while avoiding damages on the graphene layer. Unfortunately, chemical inertness of a pristine graphene layer causes an additional challenge for high-k dielectric deposition. Process conditions of ALD such as dielectric deposition temperature, type of oxidant, oxidant exposure dose, the dielectric material used and its growth rate must be carefully understood and controlled to achieve a high quality and conformal gate dielectric deposition while limiting any process induced defects. In this work, we extensively and systematically examine the effects of temperature and oxidant exposure dose on highly ordered pyrolytic graphite (HOPG), a chemically inert surface of 3-D bulk form of graphite that accurately mimics graphene and characterize the surface before and after ALD process using atomic force microscope, Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) in order to optimize a standard for dielectric deposition. We also investigate electrical characteristics of the dielectric. . |
| Proceedings Inclusion? |
Undecided |