| About this Abstract |
| Meeting |
2010 TMS Annual Meeting & Exhibition
|
| Symposium
|
Pb-Free Solders and Emerging Interconnect and Packaging Technologies
|
| Presentation Title |
Investigating Defects in Through-Silicon via (TSV) Chains by Three Dimensional Imaging Reconstruction |
| Author(s) |
Alphonse-Marie Kamto Tegueu, Robert A. Morris, Gregory B. Thompson, Susan L. Burkett |
| On-Site Speaker (Planned) |
Alphonse-Marie Kamto Tegueu |
| Abstract Scope |
Metal filled through-silicon vias (TSVs) allow electronic devices to be connected using a three dimensional approach. This technology is being optimized to address the need for increased functionality and performance. Vias with tapered sidewalls are formed in our laboratory, lined with silicon dioxide, titanium, and copper as insulation, barrier, and seed films, respectively. Vias are then filled with copper by a pulsed electroplating process. The process wafer is attached to a carrier before mechanically thinning the process wafer back side. The base of the vias is exposed from the opposite side and contact pads are formed for testing the electrical resistance of vias chained together. Discontinuity in the via chains can be investigated by a procedure involving multiple polishing and imaging steps along both the diameter and depth of the vias. Three dimensional imaging reconstruction will be described for TSVs as useful method for investigating possible defects or failures. |
| Proceedings Inclusion? |
Planned: Journal of Electronic Materials |