|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications IV
||DD-4: Thermoelectric Properties of Si/SiB3 sub-microcomposite Prepared by Melt Spinning Technique
||Jun Xie, Yuji Ohishi, Yoshinobu Miyazaki, Aikebaier Yusufu, Hiroaki Muta, Ken Kurosaki, Shinsuke Yamanaka
|On-Site Speaker (Planned)
Although bulk Si is a poor thermoelectric material due to its high thermal conductivity, it has attracted attention as a thermoelectric material since it is one of the most abundant and nontoxic materials. One of the preferred methods of significantly enhancing the thermoelectric figure of merit in recent years has been to introduce a high density of grain boundary interfaces in a material. In this study, we fabricated a semiconducting composite material consisting of sub-micro-sized (100–500 nm) SiB3 precipitates. The sub-micro-sized SiB3 particles were precipitated during the spark plasma sintering process of a metastable Si-B (Si:B = 92:8) supersaturated solid solution prepared by the melt-spinning technique. Compared with a similar p-type Si without precipitates, a considerable decrease in the lattice thermal conductivity was found in the Si/SiB3 sub-microcomposite without greatly affecting electrical properties. The influences of precipitates on the thermoelectric properties will be discussed in detail.
||Planned: A print-only volume