|About this Abstract
||Materials Science & Technology 2012
||International Symposium on Defects, Transport and Related Phenomena
||Local and Defect Structure Analysis of ITO-alternative Crystalline and Non-crystalline Transparent Conducting Oxides (TCOs)
||Qimin Zhu, Alexander U. Adler, Alex Dolgonos, Qing Ma, D. Bruce Buchholz, Robert P. H. Chang, Michael J. Bedzyk, Thomas O. Mason
|On-Site Speaker (Planned)
Owing to its various disadvantages (cost volatility, chemical instability, band misalignment with other components, e.g., in solar cells), alternatives to indium-tin oxide (ITO) as transparent conducting oxides (TCOs) continue to be developed. These include both crystalline and non-crystalline materials/films. TCO optimization requires an understanding of the local structure/defect structure. Brouwer analysis (log-log plots of electrical properties vs. oxygen partial pressure) is extremely useful for substantiating proposed point defect models. The present work focused on intermediate temperature Brouwer analyses of crystalline phases in the GITO (Ga-In-Sn-O) and IGZO (In-Ga-Zn-O) systems. More recently, the approach has been extended (for the first time) to amorphous thin films (grown by pulsed laser deposition) at temperatures below crystallization temperature. Results will be compared with the local structures obtained by X-ray absorption spectroscopy (XAS) in experiments carried out at the Advanced Photon Source at Argonne National Laboratory. Ramifications for TCO processing-structure-property relationships will also be discussed.