|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||Role of Indium Doping on Whisker Mitigation in Electroplated Sn
||Bhaskar Majumdar, Sherin Bhassyvasantha
|On-Site Speaker (Planned)
In recent work, dramatic reduction in whisker growth in Indium doped electroplated Sn has been reported. Here we present results of our studies aimed at identifying the primary mechanisms responsible for near mitigation of whiskers. Auger studies reveal the presence of mixed In2O3 and SnO/SnO2 at the surface. In addition, the surface layer shows an excess of In2O3 in the oxide scale compared to the base alloy. The large negative enthalpy of indium oxide versus tin oxide is likely a driver for the surface indium excess. FIB sections show similar reaction zone and columnar grain structure for undoped and indium doped material. It is suggested that the indium serves to compromise the tenacious oxide layer and indirect evidence is provided through polarization studies. Results from XPS measurements as well as stress measurements using XRD techniques will be presented. We gratefully acknowledge support through NSF CMMI-1335199/1335491 grant.
||Planned: Supplemental Proceedings volume