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Meeting 2021 TMS Annual Meeting & Exhibition
Symposium Frontiers of Materials Award Symposium: Low-Dimensional Materials and Interfaces for Next Generation Computing
Presentation Title Gate-tunable Neuromorphic Devices Enabled by Low-dimensional Materials
Author(s) Mark C. Hersam
On-Site Speaker (Planned) Mark C. Hersam
Abstract Scope The exponentially improving performance of conventional digital computers has slowed in recent years due to the speed and power consumption issues that are largely attributable to the von Neumann bottleneck (i.e., the need to transfer data between spatially separate processor and memory blocks). In contrast, neuromorphic (i.e., brain-like) computing aims to circumvent the limitations of von Neumann architectures by spatially co-locating processor and memory blocks or even combining logic and data storage functions within the same device. In addition to reducing power consumption in conventional computing, neuromorphic devices also provide efficient architectures for emerging applications such as image recognition, machine learning, and artificial intelligence. This talk will explore how the reduced dielectric screening in low-dimensional nanoelectronic materials enables opportunities for novel gate-tunable neuromorphic devices. Overall, this work introduces new foundational circuit elements for neuromorphic computing in addition to providing alternative pathways for utilizing the unique quantum characteristics of low-dimensional nanoelectronic materials.
Proceedings Inclusion? Planned: None Selected

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

2D/3D Heterostructures for Low-power Logic and Memory Devices
Designing Solid-state Materials from Quantum Dots for Next-generation Electronic Devices
Ferroelectrics: From Memory to Computing
Gate-tunable Neuromorphic Devices Enabled by Low-dimensional Materials
Introductory Comments: Frontiers of Materials Award Symposium: Low-dimensional Materials and Interfaces for Next Generation Computing
vdW Contacts on 2D Semiconductors

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