| About this Abstract |
| Meeting |
2021 TMS Annual Meeting & Exhibition
|
| Symposium
|
Frontiers of Materials Award Symposium: Low-Dimensional Materials and Interfaces for Next Generation Computing
|
| Presentation Title |
2D/3D Heterostructures for Low-power Logic and Memory Devices |
| Author(s) |
Deep Manoj Jariwala |
| On-Site Speaker (Planned) |
Deep Manoj Jariwala |
| Abstract Scope |
The power and efficiency of conventional computers continues to rise despite the slowdown or “death” of Moore’s law. This progress has been largely enabled by clever engineering at the architecture level of hardware as well as software. However, the growing need to process vast amounts of data for internet of things and other “big data” applications means conventional computers have to become more energy efficient. There is where low-dimensional materials such as 2D semiconductors present a unique opportunity, particularly in conjunction with conventional, commercialized 3D materials such as silicon and III-nitrides. Here, we will present our recent work on gate-tunable diode and tunnel junction devices based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS2/AlScN as well as AlScN-based Ferroelectric Tunnel Junction (FTJ) devices. |
| Proceedings Inclusion? |
Planned: None Selected |