About this Abstract |
Meeting |
MS&T22: Materials Science & Technology
|
Symposium
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2022 Undergraduate Student Poster Contest
|
Presentation Title |
Effects of Materials Processing on Electrical Properties of β-Ga<sub>2</sub>O<sub>3</sub> Contacts |
Author(s) |
Alice Ho, Bethie Favela, Kun Zhang, Kalyan Das, Lisa Porter |
On-Site Speaker (Planned) |
Alice Ho |
Abstract Scope |
β-Ga<sub>2</sub>O<sub>3</sub> is a wide bandgap semiconductor with promising applications in chemical sensing and high-power electronic devices. The objective of this research on β-Ga<sub>2</sub>O<sub>3</sub> devices is to describe how the processing conditions and material choice in the device affect the electrical properties and performance. For rectifying contacts, we analyzed the contacts’ thermal stability over long annealing times for Ni and Co metal contacts. For Ohmic (non-rectifying) contacts, the purpose was to determine if adding a highly-conductive, PLD-deposited, Si-doped thin layer to an Ohmic CTLM device with Ti/Au metal contact would reduce the specific contact resistivity. Results revealed that Co contacts were more thermally stable than Ni contacts and that the additional PLD layer in the CTLM device only slightly reduced the specific contact resistivity. Future directions include evaluating physical quantities from the double barrier curve for rectifying contacts and observing how these change with annealing time and temperature. |