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Meeting 2017 TMS Annual Meeting & Exhibition
Symposium Solar Cell Silicon
Presentation Title Phase Analysis of the Si-O2 System
On-Site Speaker (Planned)
Abstract Scope In this work the equilibrium temperature-composition phase diagrams of the Si-O2 system were calculated using Thermo-Calc software in the temperature range 500-3000 K. Constituents of stable phases were obtained, and the amounts of certain phases where investigated with the variations in the composition of oxygen and temperature. It is found that quartz with silicon represent a stable phase in the temperature range 500-1150 K, while tridymite with silicon represent a stable phase in the temperature range 1150-1700 K. A liquid phase is found besides tridymite in the temperature range 1700-1750 K., and a stable phase of cristobalite with liquid appears in the temperature range 1750-2000. The maximum amounts of quartz, tridymite, and cristobalite are found at oxygen mole percent of 67.7%. These results are important to better understand the process steps in the production of silicon for different applications including silicon solar cells.
Proceedings Inclusion? Planned: Stand-alone book in which only your symposium’s papers would appear (indicate title in comments section below)


Characterization of Composition, Morphology, and Structure of Disi Raw Sandstones in Jordan
Effect of Magnesium Addition on Removal of Impurities from Silicon by Hydrometallurgical Treatment
Electrodeposition of Solar Grade Silicon on Graphite in Molten CaCl2
Electrodynamic Eddy Current Separation of End-of-Life PV Materials
Evaporation Removal of Boron in Molten Silicon Using Reactive Fluxes
Influence of Oxygen Content on the Wettability of Silicon on Graphite
Investigation on Quartz Crucibles for Monocrystalline Silicon Ingots for Solar Cells
Particle Separation in Silicon Ingot Casting Using AC Magnetic Field
Phase Analysis of the Si-O2 System
Study on Producing Solar Grade Silicon by Carbothermal Reduction of Andalusite Ore
Study on the Segregation Behavior of Impurities during Solvent Refining Process
Topological Impurity Segregation at Faceted Silicon Grain Boundaries

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