| About this Abstract |
| Meeting |
2010 TMS Annual Meeting & Exhibition
|
| Symposium
|
Coatings for Structural, Biological, and Electronic Applications
|
| Presentation Title |
Carrier Concentration Tuning and Enhanced Photoelectrochemical Response of Bandgap-Reduced Cu and Ga Co-Doped P-Type Zno Films |
| Author(s) |
Sudhakar Shet, Kwang-Soon Ahn, Heli Wang, Todd Deutsch, Nuggehalli M Ravindra, Yanfa Yan, John Turner, Mowafak Al-Jassim |
| On-Site Speaker (Planned) |
Sudhakar Shet |
| Abstract Scope |
The synthesis of p-type ZnO films with similar bandgaps but with varying carrier concentrations through co-doping of Cu and Ga is studied. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500C in air for 2 hours. We found that the bandgap reduction and p-type conductivity are caused by Cu incorporation. The tuning of carrier concentration is realized by varying the Ga concentration. It was found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films. Our studies suggest that carrier concentration tuning by acceptor-donor co-doping is an important approach to enhance the PEC performance of electrodes |
| Proceedings Inclusion? |
Planned: Other (describe below) |