|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||2016 Functional Nanomaterials: Emerging Nanomaterials and Techniques for 3D Architectures
||Structural Study of Kinked B4C Nanowires
||Zhiguang Cui, SiangYee Chang, Terry Xu
|On-Site Speaker (Planned)
It is of significant importance to explore the formation mechanisms of kinked boron carbide (B4C) nanowires for better understanding of their interesting physical properties. Tens of kinked B4C nanowires synthesized by a low pressure chemical vapor deposition method were systematically studied by Transmission Electron Microscopy (TEM). It was found that the kinked angles of these nanowires could be acute (73°), right (90°), obtuse (e.g., 107° and 166°) or straight (180°). If the kinked angle is 90°, the nanowires often undergo changes of stacking fault orientations and growth directions, while if the kinked angle is not 90°, the nanowires tend to have same fault orientations but different growth directions. The formation of kinked B4C nanowires could be attributed to the defects and the migration of catalytic materials.