|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||Low Temperature Cu - Cu Direct Bonding for Hermetic Sealing
||Po-Fan Lin, Chih Chen
|On-Site Speaker (Planned)
The requirement of performance on electronic devices become higher while their size continues to shrink, which make overheating becomes a serious issue. To solve this problem, heat pipe plays an important role in modern electronic devices to assist heat dissipation. In this study, we perform Cu-Cu direct bonding on silicon wafers for hermetic sealing. Nanotwinned copper is deposited on the silicon wafer with Ti/Cu seed layer. An electropolishing procedure will be applied on the surface of the copper film after the deposition. Next, we perform an etching process on the copper film. A frame like mask layout is designed to pattern the copper films and the seed layers by wet etching process. Finally the bonding process can be carried out below 250 C. Furthermore, we examine the hermeticity by helium leakage test to examine the bonding quality of the Cu – Cu direct bonding.
||Planned: Supplemental Proceedings volume