|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Mechanical Behavior at the Nanoscale IV
||Size Effects in Nanoscale Wear of Silicon Carbide and Silicon
||Chaiyapat Tangpatjaroen, David Grierson, Steve Shannon, Joseph E. Jakes, Izabela Szlufarska
|On-Site Speaker (Planned)
The dependence of nanoscale wear on contact area is investigated through single-asperity wear testing of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC), and the results are compared to the wear behavior of single-crystal silicon with both thin and thick native oxides. We discovered an unexpected transition in the relative wear resistance of SiC compared to that of Si as a function of contact size. For larger contact sizes (tips with radii ~370 nm), we find that the wear resistances of both sc-SiC and nc-SiC are, as expected from Archard's law, better than that of Si. However, for smaller contact sizes (tips with radii ~20 nm), the wear resistance of SiC is worse than that of Si. We attribute the switching of the relative wear resistances to a transition from a regime dominated by the hardness of the material to a regime dominated by adhesive and interfacial shear forces.
||Planned: Supplemental Proceedings volume