|About this Abstract
||2010 Electronic Materials Conference
||TMS 2010 Electronic Materials Conference
||D3, Electrical and Optical Properties of Bulk Ternary InxGa1-xAs
||Jean Wei, Austin Berstrom, Yung Kee Yeo, Shekhar Guha, Leo Gonzalez, Robert Hengehold, Geeta Rajagopalan
|On-Site Speaker (Planned)
Advances in crystal growth techniques have allowed successful growth of good optical grade melt-grown bulk ternary In<sub>x</sub>Ga<sub>1-x</sub>As crystals using the vertical Bridgman technique. These crystals are promising candidates for electro-optical and photonic applications at long wavelength ranges beyond the capability of today's epilayer semiconductor devices. In order to fully utilize these ternary alloys, the electrical and optical properties of the recent melt-grown bulk In<sub>x</sub>Ga<sub>1-x</sub>As (x = 0.75 to 1) have been investigated as a function of temperature and indium mole fraction x through photoluminescence, Hall effect, and absorption spectroscopy measurements. Hall effect measurements revealed moderate n-type doping with carrier concentrations ranging from 1.5 to 9.6×10<sup>16</sup> cm<sup>-3</sup> at 10 to 15 K. Hall mobility increased with rising indium content, and mobility values at 15 K ranged from 1.5×10<sup>4</sup> cm<sup>2</sup>/V∙s for In<sub>0.75</sub>Ga<sub>0.25</sub>As to 3.5×10<sup>4</sup> cm<sup>2</sup>/V∙s for InAs. Laser excitation power dependent PL measurements at 12 K and temperature dependent PL measurements at temperatures ranging from 12 to 140 K showed band-to-band, free-to-bound, and donor-acceptor pair transitions.