A1, The Electrical Properties of Metal/Gd2O3/Si Gate Stacks and Their Dependence on the Structure of the Oxide Layer

A2, Spin Dependent Trap Assisted Tunneling in Gd2O3 Dielectrics

A3, Crystalline Lattice-Matched Ba0.7Sr0.3O on Si(001) as Gate Dielectric

A4, Rare-Earth Scandates/Tin Gate Stack on High Mobility Strained SOI for Fully Depleted (FD) Mosfets

AA10, Evolution and Growth of Nanostructures on ZnO with Staged Annealing

AA1, Vacancy Defect and Defect Cluster Energetics in Ion-Implanted ZnO

AA2, O-H-Li-Complex in Hydrothermally Grown Single Crystalline ZnO

AA3, Induced Gap States at Zinc Oxide Surfaces and Interfaces

AA4, Optical Properties of Gd Implanted ZnO Single Crystals

AA5, High-Resolution Laplace DLTS on MgxZn1-xO PLD Thin Films

AA6, Observation of a Strong Polarization Induced Quantum-Confined Stark Effect in MgXZn1-XO/ZnO Quantum Wells

AA7, Low Temperature Electrochemical Growth of ZnO Nanobelts, Nanowalls, Nanospikes and Nanowires: Growth Mechanism and Field Emission Study

AA8, Synthesis and Field Emission Characterizations of Well-Aligned Single-Crystal Al-Doped ZnO Nanowires Grown at Low Temperature

AA9, Correlation of ZnO Polar Surface Nanostructure with Native Point Defects

B1, Innovative Time-Resolved Optical Characterization Techniques for Monitoring of Carrier Dynamics in Wide Band Gap Semiconductors

B2, Raman Characterization Methodologies Suitable for Determining Graphene Thickness and Uniformity

B3, Characterizing the RF Properties of Semiconductors under Optical Illumination

B4, Admittance Spectroscopy of GaSb(100) and ALD / PEALD Al2O3 Dielectric Interface with Various Surface Treatments

B5, High Temperature Coefficient of Resistance Sputtered A-Ge for Uncooled Microbolometer Applications

B6, Temperature Dependence of the Lattice Constant of Popular III-Sb Binary and Quarternary Alloys

BB1, Demonstration and Room Temperature Electrical Characteristics of a Nitride Hot Electron Transistor with GaN Base of 10 nm

BB2, Novel Cs-Free GaN Photocathodes

BB3, Influence of MOVPE Growth Conditions on Intersubband Absorption in AlN –AlGaN Superlattices

BB4, Engineering Ferromagnetism in Gd-Doped GaN Two-Dimensional Electron Gases

BB5, Nearly Ideal Current-Voltage Characteristics of Schottky Barrier Diodes Directly Formed on GaN Free-Standing Substrates

C1, Pulsed-Laser Atom Probe Tomographic Analysis of Ge-Ge/Co/Mn Thin-Film Superlattices

C2, Atomic Scale Gate Electrode Formed by a Charged Defect on GaAs(110)

C3, Ordered Assemblies of Bimetallic Nanostructure Arrays Utilizing a Self-Assembled Disilicide Nanowire Template

C4, Scanned Probe Characterization of Self-Assembled ErAs/GaAs Semimetal/Semiconductor Nanostructures Grown by Molecular-Beam Epitaxy

CC1, High Al Composition Al0.72Ga0.28N/AlN/GaN Heterostructures with High Mobility Two-Dimensional Electron Gases

CC2, Two-Dimensional Electron Gas in InXAl1-XN/Aln/GaN Heterostructure Field-Effect Transistors Depending on Indium Composition

CC3, Source-Drain Regrowth by MBE in Metal-Face AlN/GaN HEMTs

CC4, AlGaN/GaN High Electron Mobility Transistors for Large Current Operation Achieved by Selective-Area Growth Using Plasma-Assisted Molecular Beam Epitaxy

CC5, Transport Studies of AlGaN/GaN Heterostructures with Variable SiNx Passivant Stress

D1, Review of Narrow Bandgap Semiconductor Based THz-Emitters

D2, Electrical and Optical Studies of Melt Grown Optical Grade InAs1-yPy

D3, Electrical and Optical Properties of Bulk Ternary InxGa1-xAs

D4, Optical and Thermal Properties of III-V Bulk Ternary InxGa1-xSb and InxGa1-xAs Crystals

DD1, Ultraviolet Photodetectors with Novel Oxide Thin Films

DD2, Polarization-Sensitive Schottky Photodiodes Based on A-Plane ZnO/ZnMgO Multiple Quantum-Wells

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells

DD4, Double Heterojunction Metal-Semiconductor-Metal Photodetector Using ZnO/Si Structure

DD5, A Study of Indium Doped-ZnO/p-Si(111) Diode Characteristics with Various In Mole Fraction

DD6, Effects of High - Energy Electron Irradiation on Pd/ZnO/Si MSM Photodetector: Conduction Mechanisms and Radiation Resistance

E1, Investigation of Physisorbed and Chemisorbed Sulfur Species for GaAs Wafer Bonding

E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors

E3, Effect of Surface Activation for Ge-Si Integration Using Wafer Bonding

E4, Strain, Annealing, and Exfoliation in Hydrogen Implanted GaN for Layer Transfer Applications

E5, Optimization of Adhesive Wafer Bonding for Silicon

E6, Development of Surface Activation Based Nano-Bonding and Interconnect System

EE1, Overgrowth Investigation of Epitaxial Semimetallic Nanoparticles for Photonic Devices

EE2, Regrown InGaAs Tunnel Junctions for TFETs

EE3, Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunnelling Diodes

EE4, Hole Mobility Improvement in Strained InGaSb Quantum Well with Carbon Doping

EE5, Growth and Thermal Conductivity of Polycrystalline GaAs Grown on CVD Diamond Using Molecular Beam Epitaxy

EE6, Thick HVPE Growth of Patterned Semiconductors for Nonlinear Optics

EE7, Effects of Carrier Localization on Emission Spectra of Dilute GaAsN Materials Doped with Silicon

EE8, Fabrication and Characterization of Free-Standing InGaAs/GaAs Quantum Dot Microbelt-like Optical Resonators

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid-Infrared Applications

Epitaxial Graphene: Designing a New Electronic Material

F1, Applications of SiC Power Devices – A Materials and Device Perspective

F2, Review of the Dominant Scattering Mechanisms in SiC MOS Devices

F3, A Comparative Study of Thermal and Deposited Gate Oxides on 4H SiC

F4, Magnetic Resonance Studies of 4H SiC MOS Structures

F5, Influence of Geometry on Silicon Carbide JBS Diodes Conduction

FF1, The Influence of the Catalyst on Dopant Incorporation during Si and Ge Nanowire Growth

FF2, Size Effects in Semiconductor Nanowire Synthesis at the Ultimate Limit

FF3, Growth and Applications of Silicon/Germanium Axial Nanowire Heterostructures

FF4, SiGe/Si Selective Etch Structures for Nanowire Release and Assembly

FF5, Diffusion Formation of Nickel Silicides Contacts in Silicon Nanowires

FF6, Comparative Study of Ni-Silicide and Germanide Formation in Contacts to Si and Ge Nanowires

FF7, High Responsivity Vertical Si Nanowire Photodetector Arrays

FF8, Si Nanowire Mats for Large-Area Electronics

FF9, Jet-Printed and Dielectrophoretically Aligned Nanowires for Large Area Electronics

G10, Optimization of Dielectric Passivation of ZnO-Based Schottky Diodes

G1, Temperature Dependent Measurements of ZnO TFTs

G2, Flexible ZnO Temperature Sensors on Plastic Substrate

G3, Improvement of InGaZnO4 TFT Device Performance on Glass and Paper Substrates

G4, Sputtering of ZnO Thin Films for TFT on Polyimide Substrates

G5, Zinc-Tin-Oxide Thin-Film Transistors with Al2O3 and ZrO2 Gate Dielectrics

G6, Study of CV and Admittance Characteristics of ALD High-K Dielectric ZnO Capacitors

G7, Transparent Rectifying Contacts - A New Concept for Transparent Electronics

G8, Transition from Hopping to Band-like Transport in Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors

G9, A Comparative Study of the Effect of Heat Treatment on the Microstructure and Properties of Colloidal ITO Films and Cold-Sputtered ITO Films

GG1, Bulk-like Thermionic Energy Conversion Device Fabricated from Laminated Nanostructured Metal/Semiconductor Superlattices

GG2, Epitaxial Growth of Transition Metal Nitrides on MgO via DC Magnetron Sputtering

GG3, Enhancement of Thermoelectric Efficiency in Si1-xGex/Si Heterostructures

GG4, Isothermal Method for Rapid, Steady-State Measurement of Thermoelectric Materials and Devices

GG6, Thermomagnetic Transport Properties of (AgxSbTex/2+1)15(GeTe)85 Thermoelectric Materials

GG7, Thermoelectric Properties of Sn-Rich Pb1−xSnxTe Alloys Doped with Indium

GG8, Incorporation of AgSbTe2 to Pb1-xSnxTe by Mechanical Alloying of End Compounds

GG9, Electron Transport Properties of Mechanically Alloyed N-Type Pb1-xSnxTe Thermoelectric Elements

H1, Molecular Contact Doping in Organic Thin-Film Transistors

H2, Gate Dielectric Thickness Dependence of OTFT Performance

H3, Arylene Diimide-Thiophene Semiconductors for n-Channel Field-Effect Transistors

H4, Advanced X-Ray Peak Shape Analysis of Organic Semiconductors: Insights into Crystalline Size, Strain, Intragrain Disorder and Implications for Charge Transport

H5, Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy

H6, Study on the Resistance of Stretchable Electrodes from Surface Morphology Aided by Computer Modeling

H7, Reverse Offset Roll Printing Using High Resolution Printing Plate for Electronic Application

H8, A Novel Hybrid Electrical and Chemical Barrier Material for Flexible Electronics

HH1, Effect of Contact Modification on Charge Transport at Different Length Scales in Poly(3-Hexylthiophene)-Based Bottom-Contact Field-Effect Transistors

HH2, Low Pressure Chemical Vapor Deposition of Conformal Boron Thin Films on Deep RIE-Etched Si Substrates

HH3, Assessment of the Passivation Capabilities of Two Different Covalent Modifications on GaP (100)

HH4, Comparison of Ga-Polar and N-Polar GaN by KOH Photoelectrochemical Etching

HH5, N-Type Electrodes for GaN-Based Vertical Light Emitting Diodes

HH6, In-situ Ohmic Contacts to p-InGaAs

HH7, Degradation of Ohmic and Schottky Contacts on InGaAs MHEMTs during Bias Stressing

HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications

HH9, Post-Growth InGaAsP Quantum Well Intermixing for High Saturation Power Semiconductor Optical Amplifiers

I10, Growth and Characterization of In1-xMnxSb Ferromagnetic Semiconductor Alloys Using Metal Organic Vapor Phase Epitaxy (MOVPE)

I1, An Organic-Based Magnetic/Nonmagnetic Semiconductor as a Spin Polarized Carrier Source/Channel: Moving Toward Organic Spintronics

I3, Observation of Antiferromagnetic Interlayer Exchange Coupling in a GaMnAs/GaAs:Be/GaMnAs Tri-Layer

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED)

I5, Properties of MnAs/GaMnAs/MnAs Magnetic Multilayers and Their Application to High Temperature Vertical Spin Valves

I6, The Magneto-Optic Kerr Effect (MOKE) as a Measure of Strain-Induced Ferromagnetism in EuTiO3 Grown by Molecular-Beam Epitaxy

I7, Magnetic Circular Dichroism (MCD) Studies on GaMnAs

I8, Magneto-Optical Spectroscopy of MOVPE Grown Ferromagnetic Semiconductors

I9, Micromagnetic Simulation of Focused Ion Beam Patterned Cobalt-Platinum Multilayers

II1, Reduction in Operation Voltage of Light Emitting Diodes Fabricated in Si/III-V-N/Si Heterostructure

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110) Substrates

II3, 2μm Thick Device Quality GaN on Si(111) Using AlGaN Graded Buffer

II4, Compositionally-Graded Layers Composed of Tandem InGaAs InGaP Alloys and Pure GaAsSb Alloys to Engineer the InP Lattice Constant on GaAs Substrates

II5, Characterization of Standard and Ferromagnetic Schottky Barriers on GaP/GaP and GaP/Si Epi-Layers

II6, Silicon Nanostructures Ion Implanted with Carbon and Nitrogen as an Electron Emitting Device

II7, High-Quality (211)B CdTe on (211) Si Substrates Using Metal-Organic Vapor-Phase Epitaxy

II8, Metalorganic Vapor Phase Epitaxial Growth of (211)CdTe on Nanopatterned (211)Ge/Si Substrates Using Full Wafer Block Copolymer Lithography

II9, Effects of Ex-Situ Cycle Annealing on Dislocation Densities of HgCdTe/CdTe/Si Layers

J10, Enhanced Light Absorption in Thin-Film Silicon Solar Cells by Scattering from Sub-Surface Dielectric Nanoparticles

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions

J2, InxGa1-xAs Metamorphic Buffer Layers for Lattice Mismatched Multi-Junction Solar Cells

J3, Quantum Dot n-i-p-i Photovoltaic Devices

J4, Characterization of a p-i-n Photovoltaic Cell Containing InAs/GaAs Quantum Dots

J5, MBE Growth of Lattice-Matched 6.1Å II-VI on GaSb Substrates

J6, ZnO/ZnTeO/ZnTe Heterojunctions for Intermediate State Solar Cells

J7, Copper Zinc Tin Sulfide Solar Cell Development by RF Sputtering from Binary Targets

J8, Chemical Vapor Deposition of CsSnI3 Thin Films for Photovoltaic Applications

J9, Exploring More Effective Catalysts for Metal-Induced Growth of Thin Film Si

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN Multiple Quantum Wells

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs

JJ3, Anisotropic Carrier Mobility in GaN Quantum Well Grown in Non-Polar Direction: Polarization Induced Dipole and Interface Roughness Scattering

JJ4, MBE Growth of Nitrogen-Face Aluminum Nitride by Polarity Inversion Using Magnesium Overdoping

JJ5, Electro-Thermo-Mechanical Simulation of AlGaN/GaN HFETs and MOSHFETs

K10, Growth and Lift-off of High-Quality GaN Thin Films Using Self-Assembled Silica Microsphere Monolayers

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires on (001) Silicon and Nanowire Light Emitting Diodes

K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by Molecular Beam Epitaxy

K3, Growth of Dislocation-Free and High-Indium-Content InGaN/GaN Coaxial Nanowires

K4, Threshold Studies of Optically Pumped GaN Nanowire Lasers

K5, GaN Nanowire MOSFETs with Fully Conformal Cylindrical Gates

K6, Formation Mechanisms and Kinetics of Negative Nanowires in GaN and ZnO Using In-Situ Transmission Electron Microscopes

K7, Self-Assembled GaN/AlN Nanowire Superlattices on Si toward Non-Polar Intersubband Photonics

K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free GaN Nanowires

K9, Homoepitaxial Nucleation of GaN Nanowires in Grooves

KK1, Mg Doped InN and Search for P-Type InN

KK2, Dislocation Reduction via Epitaxial Lateral Overgrowth of InN by Selective-Area-Growth of RF-MBE

KK3, Growth Orientation Control of InN by Pulsed Excitation Deposition

KK4, Optical and Electrical Transport Properties of Nearly Intrinsic and Si-Doped InN Nanowires

KK5, Growth Optimization of Si3N4 on GaN by Metal-Organic Chemical Vapor Deposition

L10, High Temperature Transport Properties of GaN HEMTs with Various Heterostructure Designs

L1, Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress

L2, Electrical Properties of GaN/AlN/GaN Heterostructures: Presence of 2DHG

L3, Study of Cause of Gm-Collapse for Higher Gate Voltages in N-Polar GaN HEMTs with Scaled GaN Channels

L4, Polarization-Engineered Low-Leakage Buffers for Nitride HEMTs Grown by MBE

L5, The Influence of High-k Gate Dielectrics on Deep Traps in AlGaN/GaN High Electron Mobility Transistors Measured by Deep Level Spectroscopy Methods

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters

L8, Demonstration of Enhancement Mode AlN/Ultrathin AlGaN/GaN HEMTs Using Selective Wet Etching

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L9, Growth and Characterization of InGaN Heterojunction Bipolar Transistors

LATE NEWS: DD7, Switching in Flexible Titanium Dioxide Memristors

LATE NEWS: EE10, Gettered GaP Substrates for Improved Multi-Junction Solar Cell Devices

LATE NEWS: H9, ZnO Nanowire Based Visible-Transparent UV Detectors on Flexible Substrates

LATE NEWS: L7, Molecular Beam Epitaxy of N-Polar InGaN

LATE NEWS: N10, Controlled Fabrication of 1D or Semi-2D Molecular Nanostructures and Study of Optical Properties

LATE NEWS: P5, Application of ZnO for Solar Driven Photoelectrochemical Splitting of Water to Produce Hydrogen

LATE NEWS: U10, Electrical Noise in Exfoliated and Epitaxial Graphene

LATE NEWS: U9, Electron Transport Studies of Free-Standing Epitaxial Graphene Produced from Ion Implanted Semi-Insulating Silicon Carbide

LATE NEWS: V5, Influence of Dopant Atoms on InAs/GaAs Quantum Dot Electronic States

LATE NEWS: W7, Transport Modulation in Ge/Si Core/Shell Nanowires through Controlled Synthesis of Doped Si Shells

LATE NEWS: D5, Initial Studies on Microwave and Terahertz Detection Using AlN/GaN HEMTs

M1, Material and Electronic Properties of CVD Graphene Grown on Ni and Cu then Transferred to Insulators

M2, Fabrication and Characterization of Graphene Materials Grown via CVD on Copper Based Substrates

M3, Kinetic Limitations in the Formation of Graphene on the C-Face of SiC

M4, Graphene to Graphane: Novel Electrochemical Conversion and Possible Applications

M5, Growth of Few Layer Graphene on C-Face SiC

M6, Graphene Growth on SiC, SiO2, and Sapphire with Carbon Addition

M7, Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene

M8, Comparison of Graphene Thickness Determination for MBE Grown Graphene on SiC Using Raman, XPS, and TEM

N1, STM Studies of Hybrid Inorganic-Organic Molecular Magnets on an Ultrathin Insulating Film

N2, Effect of Molecular Tilt Configuration and Interface Dipoles on Molecular Electronic Conduction

N3, Improvement of Transfer Characteristics in Carbon Nanotube Field-Effect Transistors with Au Nano Clusters

N4, Carbon Nanotube Field-Effect Transistor Biosensor with Schottky Barrier Control Gate Electrode

N5, Breakdown Statistics and Nanowire Device Integration of Self-Assembled Nano Dielectrics

N6, Functionlization Studies on GaN Nanowires

N7, Olefin Metathesis Reaction on GaN (0001) Surfaces

N8, Protection of ZnO Nanowires for Liquid-Phase Sensing

N9, Signal-to-Noise Ratio Improvement of Magnetoelectric Laminate Sensor by Multilayer Structure and Direct Integration with Advanced Microelectronics

O10, Vanadium Doping Using VCl4 Source during the Chloro-Carbon Epitaxial Growth of 4H-SiC

O1, Analysis of Dislocation Interactions in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

O2, Formation of a (5-1)-Bilayer-Height Complex Step-and-Terrace Structure on 4H-SiC (0001) by a Spiral Etching Process

O3, Processes Controlling the Carrier Lifetime in n- 4H-SiC Epilayers with Low Z1/2 Concentrations

O4, Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

O5, Expansion and Contraction of Stacking Faults in 4H-SiC

O6, Influence of Stacking Fault Generation and Half Loop Array on Electrical Behavior of 4H-SiC 10 kV PiN Diodes

O7, Reducing Basal Plane Dislocation Density in Nitrogen and Aluminum Doped 4H-SiC Epilayers

O8, Improved Surface Morphology of 4H-SiC Homoepitaxial Layers Grown on Si-Face 4° off-Axis Substrates

O9, High-Purity Semi-Insulating 4H-SiC Homoepitaxy at a High Growth Rate Using Dichlorosilane for High Power Devices

P10, Dissociation of Photo-Generated Excitons on Carbon Nanotubes at Type-II Heterojunctions

P1, Fabrication of Individual Silicon Nanowire Radial Junction Solar Cells

P2, Wire Textured Multicrystalline Silicon Solar Cells

P3, Efficiency Enhancements for Copper Contaminated Radial p-n Junctions over Planar p-n Junctions in Silicon

P4, Wafer Scale Si Nanowire Arrays for Photovoltaic Applications

P6, Branched ZnO/Si Nanowire Heterostructure Based Photoelectrochemical Cell for Efficient Water Splitting

P7, Solar Cells Based on ZnO/ZnS Core-Shell Nanowires Arrays

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined Self-Assembly Technique for Broadband Antireflection Coating

P9, Hybrid Solar Cell Based on Patterned Nanopillar/P3HT Heterojunction

Q10, Application of Many Electron Charge Transfer Multiplet (CTM) Theory to Band Edge and Band Defect States in High-K Gate Dielectrics and Complex Functional Oxide Thin Films

Q1, Pulsed-dc Reactive Sputtering Vanadium Oxide Thin Films for Microbolometers

Q2, Defects in Low-κ Dielectrics and Etch Stop Layers for Use as Interlayer Dielectrics in ULSI

Q3, Nanocluster and Nanocrystalline Si Trap Distributions within SiO2/SiOx/SiO2 Field Oxides for Radiation-Tolerant Electronics

Q4, Nanoscale Depth-Resolved Electronic Properties of HfO2/RPAN/Ge and HfSiON/RPAN/Ge Gate Dielectrics for Radiation-Tolerant Electronics

Q5, Nano-Gap Electrodes Formed at the Exposed Edge of Au/Al2O3/Au Tunnel Structures Grown by Atomic Layer Deposition

Q6, Surface-Interface Conductivity in Thin Film Gd-doped CeO2

Q7, Growth of Heteroepitaxial SrRuO3 Electrodes on CeO2 Buffered R-Plane Al2O3 Substrates by RF Magnetron Sputtering

Q8, Evidence of Ferroelectricity Induced by Epitaxial Strain in Calcium Titanate Thin Films Grown by Molecular-Beam Epitaxy

Q9, Synchrotron Spectroscopy Detection of Spin-Polarized Bands and Hopping-Induced Mixed Valence for Ti and Sc in GdSc1-x TixO3 for x = 0.18 and 0.25

R10, Synthesis and Charaterization of p-NiO/n-ZnO Heterojunction Diode by Spray Pyrolysis

R1, Nucleation Layer Based Optimization of MOCVD Grown ZnO by In Situ Laser Interferometry

R2, Influence of Substrate Temperature and Post-Deposition Anneal on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

R3, Epitaxial Electrochemical-Deposition of ZnO on Graphite and p-GaN Substrates

R4, Control of ZnO Epitaxial Growth via Focused Ion Beam Induced Damage in Lattice-Mismatched Substrates

R5, Properties of Nitrogen Molecules in ZnO

R6, High-Quality p-Type ZnO Layers Grown by Co-Doping of N and Te

R7, Magnetic Properties of Mn and N Doped ZnO

R9, Hydrothermal Synthesis of Wide Bandgap BexZn1-xO Nanorods for Solar Blind Photodetection

S1, Effect of Inaln Electron Blocking Layer in Visible Light-Emitting Diodes on Quantum Efficiency Grown by Metalorganic Chemical Vapor Deposition

S2, Fabrication of GaN-Based Laser Diode and Laser Diode Facet Formation

S3, Performance Improvement of AlInGaN Visible Laser Diodes by Epitaxial Layer Design

S4, Enhancement of the Light-Extraction Efficiency of GaN-Based Light-Emitting Diodes Using a Graded-Refractive-Index Layer

S5, Nano-Fabrication of Green AlGaInN LEDs – Structural Wavelength Control and Enhanced Light Extraction

T1, Polarization Induced p-Doped Nitride Quantum Well UV LEDs

T2, Structural Characterization of Highly Conducting AlxGa1-xN (x >50%) for Deep Ultraviolet Light Emitting Diode

T3, Epitaxial Growth and Doping of AlGaN Alloys on AlN Single Crystal Substrates

T4, Morphological Development of Homoepitaxial AlN Thin Films Grown by MOCVD

T5, Aluminum Gallium Nitride Alloys Grown via Metal Organic Vapor Phase Epitaxy Using Digital Alloy Growth Technique

U1, Sub-20 nm Patterning of Graphene Nanoconstrictions Using Nanosphere Lithography and Characterization of Its Electronic Properties

U2, Carrier Transport in Graphene P-N Junctions

U3, Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties

U4, Comparison of Ballistic Performance of Graphene and Planar III-V MOSFETs for RF Low Voltage Applications

U5, Graphene Fundamental Trade-offs and Asymmetric Bandgap Opening

U6, Hall Effect Mobility of Epitaxial Graphene on Si-Face SiC

U7, Highly Efficient Photovoltaic Devices with Transparent Graphene Electrode and TiOX Layer

U8, Integrated Circuits Based on Carbon-Nanotube Transistors and Amorphous-Carbon Thin-Film Load Resistors

V1, Toward Conversion from Electron Pairs to Photon Pairs in Quantum Dots

V2, Tensile-Strained Self-Assembled III-V Nanostructures

V3, Self-Assembled In0.5Ga0.5As Quantum Dots on GaP(001)

V4, Time-Resolved Spectroscopy of Single Colloidal CdSe Nanowires with Picosecond Resolution

V6, Resonant Periodic Gain InAs Quantum Dot VECSEL

V7, Quantum Dot Light Emitting Devices and Exciton Recombination Zone

V8, Thermal Stability in Emission Peak in Multilayer InAs/GaAs Quantum Dot Heterostructure in Laser Application

V9, Enhancement of Luminescence Efficiency in InAs/GaAs Quantum Dots by Proton Irradiation

W10, Simulation of the Influence of Grain Boundaries on Resistivity via the Wigner-Fokker-Planck Equation

W1, Single Crystalline Wurtzite GaAs Nanoneedles Epitaxially Grown on Highly Lattice-Mismatched Sapphire with Bright Luminescence

W2, Twinning Superlattice in VLS Grown <110> Planar GaAs Nanowires Induced by Impurity Doping

W3, Photoluminesence of InGaAs Nano-Pillar Arrays on GaAs Substrate

W4, Synthesis and Characterization of GaAs/MnAs Core/Shell Nanowires

W5, Contact Laser Annealing Effects on Indium Oxide Nanowire Transistors

W6, Vertical InSb Nanowire Arrays Electrodeposited into Porous Anodic Alumina Templates on Silicon Substrates

W8, Formation of Periodic Nanostructures through Kirkendall Constitutional Interdiffusion in Epitaxial Heterostructures

W9, Thermal Conductivity of Aluminum Nanowires near Room Temperature: Direct Measurements and Theory

X10, Effect of Aluminum Composition on Current-Voltage Characteristics of AlGaSb/InAs Tunnel Junction

X1, Minority Carrier Lifetime in LWIR Type II Superlattice Detector Structures Using Time-Resolved Photoluminescence

X2, MOCVD Growth of InAs/GaSb Type-II Superlattice Structures and Photodiodes for Mid-Infrared Detection

X3, Investigation of Passivation Techniques on InAs/GaSb Strained Layer Superlattice Long Wave Infrared Detectors

X4, Investigation of Antimonide Infrared Detectors Based on the nBn Design

X6, Quinternary GaInAsSbP on GaAs Substrates Grown by Metal Organic Vapor Phase Epitaxy (MOVPE)

X7, Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum Well Structures on GaAs

X8, Perforated (In)GaSb Quantum Wells on GaSb Substrates through the Use of As2 Based In-Situ Etches

X9, Antimonide VECSELs on AlGaAs DBRs

Y1, Dislocation Filtering in GaN Nanorods

Y2, Threading Defect Elimination in GaN Nanostructures

Y3, Yellow-Orange Luminescence from III-Nitride Nanopyramid Heterostructures

Y4, Molecular Beam Epitaxial Growth and Characterization of InGaN/GaN Dot-in-a-Wire Nanoscale Heterostructures on Si

Y5, Electrochemical Etching of GaN and Its Applications

Z1, Luminescence Recombination Dynamics of Ytterbium Implanted GaN Epilayers

Z2, Energy Levels of Nd3+ Ions in In Situ Doped AlN

Z3, Correlation of InGaN Growth Parameters, Defects and MQW Radiative Efficiency for Blue to Green Emission

Z4, Proton-Irradiated AlGaN/GaN HEMT at 5 MeV Protons

Z5, Effect of Traps Spatial Localization on GaN HEMT Static Characteristics

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