|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||2018 Symposium on Functional Nanomaterials: Discovery and Integration of Nanomaterials
||Study on the Stress-induced Ferroelectric Polarization of Hafnium Zirconate Thin Films Realized at Low Temperature
||Jaidah Mohan, Si Joon Kim, Dushyant Narayan, Jaegil Lee, Jiyoung Kim, Scott Summerfelt
|On-Site Speaker (Planned)
The main focus of this investigation is to study the effect of the TiN top electrode (TE) thickness and annealing temperature in forming the non-centrosymmetric orthorhombic phase (o-phase), which is responsible for the ferroelectric properties in 10-nm-thick Hf0.5Zr0.5O2 (HZO) films. It was seen that a thick TiN TE (>90 nm) acts as a very good tensile stressor, helping the HZO to crystallize into an o-phase without a monoclinic phase during 400oC annealing process. The fabricated TiN/HZO/TiN capacitor shows large polarization (45 μC/cm2) and low saturation voltage (1.5 V). Therefore, TiN TE having a thickness of at least 90 nm helps in single o-phase formation that generates a large polarization, even at a low thermal budget (400oC).
||Planned: Supplemental Proceedings volume