|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||Oxide Growth Mechanism of (111), (100) and Random Copper Films at Low Temperatures for the Application of Cu-to-Cu Direct Bonding
||Chih-Han Tseng, Chih Chen
|On-Site Speaker (Planned)
Cu direct bonding has been implemented in CMOS image sensors by Sony. Prior to the Cu direct bonding, the Cu oxides on the Cu surface need to be removed. However, the surface may get oxidized right after the cleaning process. Thus, the Cu oxidation is an important issue in the study of Cu direct bonding. Our previous study reported that low temperature Cu direct bonding can be achieved by (111)-oriented nanotwinned Cu. However, the oxidation behavior of the nanotwinned Cu is not clear. In this study, we examine the oxidation behavior of highly (111)-, (100)- and randomly-oriented Cu films at temperatures ranging from 250 to 100 C. Because of the oxidation layer is too thin, we use the transmission electron microscopy to observe the oxide thickness. The results shows that the oxidation rate of (111)-oriented nanotwinned Cu possesses the lowest oxidation rate among the three Cu films.
||Planned: Supplemental Proceedings volume