|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Late News Posters
||PP-48: Ultrathin Tantalum Based High-density Power Capacitors with Low Leakage and High Operating Frequency
||Parthasarathi Chakraborti, Himani Sharma, Markondeya Raj Pulugurtha, Rao Tummala
|On-Site Speaker (Planned)
This work demonstrates the modelling, fabrication and characterization of silicon-integrated tantalum based thin-film high-density capacitors (HDCAP) in an integrated power module for low power applications. Existing discrete tantalum capacitor technology meets HDCAP requirements. However, they have incompatibility issues with organic/silicon packages bringing in several packaging and integration challenges. Demand for higher volumetric efficiency capacitors with electronic package compatibility requires high surface area architectures, low temperature, low cost and scalable processes and more elegant approach to fabricate HDCAPs. Thin-film capacitors were fabricated by printing and sintering of Ta nanoparticles to form high surface area anode followed by conformal dielectric oxide growth through the process of anodization and dispensing of cathode inside porous electrode structure.
The capacitors demonstrated stable volumetric capacitance densities of more than 4 µF/mm3 upto 10 MHz with leakage of less than 0.1 µA/µF at 3 V. Compositional, Structural and electrical studies were done to characterize tantalum-pentoxide films.