|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Advanced Microelectronic Packaging, Emerging Interconnection Technology, and Pb-free Solder
||Growth of Intermetallic Compound in Co/Sn3.5Ag/Co and Co/Sn3.5Ag/Cu Structure under Thermomigration
||Yuan-Ruei Hsu, Gong-Lin Hong, Shan-Yu Mao, Wei-Jun Liu, Fan-Yi Ouyang
|On-Site Speaker (Planned)
For the requirements of higher conductivity, low power consumption and small feature size of chips, a new material “Co” has been developed as metallization layer to meet the demands in recent years. Furthermore, temperature gradient induced mass transport is expected to cause serious reliability issues in three-dimensional integrated circuit (3D IC) due to heat would dissipate from the surface of stacking chips. Thus, this study use sandwich structure of Co/Sn3.5Ag/Co and Co/Sn3.5Ag/Cu to investigate the diffusion behavior of Co and Cu under a temperature gradient. The interfacial reaction and phase evolution of intermetallic compound would be examined. The corresponding growth kinetic of IMC would be discussed and compared for both samples.
||Planned: Supplemental Proceedings volume