| About this Abstract |
| Meeting |
2021 TMS Annual Meeting & Exhibition
|
| Symposium
|
Frontiers of Materials Award Symposium: Low-Dimensional Materials and Interfaces for Next Generation Computing
|
| Presentation Title |
vdW Contacts on 2D Semiconductors |
| Author(s) |
Manish Chhowalla |
| On-Site Speaker (Planned) |
Manish Chhowalla |
| Abstract Scope |
Ultra-clean van der Waals interfaces can be achieved between soft indium metal and monolayer 2D transition metal dichalcogenide semiconductors. Such interfaces lead to low contact resistance and n-type field effect transistors with high mobilities – in excess of 100 cm2-V-1-s-1. It has been, however, challenging to make similarly clean interfaces between refractory metals with high work functions to achieve efficient hole injection. Here, I will present our efforts on realizing p-type contacts using high work function metals and alloys. We show that it is possible to deposit a thin layer of indium and then a high work function metal on top of it to form an alloy by annealing at 200oC. This method preserves the ultra-clean interface between the monolayer semiconductor and alloy while increasing the work function so that p-type devices can be realized. These interfaces reveal low contact resistance and also high mobility p-type devices. |
| Proceedings Inclusion? |
Planned: None Selected |