|About this Abstract
||2011 TMS Annual Meeting & Exhibition
||Surfaces and Heterostructures at Nano- or Micro-Scale and Their Characterization, Properties, and Applications
||On the Role of Interface Engineering in Future Technology Applications
||Aarthi Venkateshan, Rajendra Singh
|On-Site Speaker (Planned)
The global need for high performance, low power computing continues as a major driver of the semiconductor industry. A decade ago, Moore’s Law scaling meant oxide thickness, transistor length and width were scaled by factor (1/k) to provide delay improvement 1/k at constant power density. In subsequent generations, performance enhancers were added to drive the transistor roadmap forward. The continued decrease in feature sizes means management of interfaces will play an important role in future scaling. High quality ZrO2 high-k films were grown, EOT 1.4 nm 1V leakage current density 1.83 10-11 A/cm2 was observed. For Al2O3 of EOT 1.04 nm at 1 V leakage current density 5.71 10-11 A/cm2 was achieved. We report results of EOT 0.39 nm HfO2 with leakage current density 1.0 10-12 A/cm2 for gate voltage -3 to +3 V. Based on DOE and process variation data, process is robust and will transfer from laboratory to manufacturing environment.
||Planned: A CD-only volume