|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Frontiers in Materials Science, Engineering, and Technology: An FMD Symposium in Honor of Sungho Jin
||Remarkable Conversion of p to n Type Reduced Graphene Oxide (rGO) by Laser Annealing Technique at Room Temperature and Pressure
||Anagh Bhaumik, Ariful Haque, Jagdish Narayan
|On-Site Speaker (Planned)
This research illustrates successful wafer scale integration and p to n type conversion of 2D rGO employing pulsed laser deposition followed by pulsed laser annealing using nanosecond ArF excimer laser. The rGO thin films grown onto c-sapphire employing pulsed laser deposition in laser MBE chamber are intrinsically p type in nature. Subsequent laser annealing using different laser energy densities: 0.6Jcm-2, 0.8Jcm-2 and 1.0Jcm-2 at room temperature and pressure converts p type rGO to n type semiconductor. XRD, SEM, Raman spectroscopy, Hall measurements, XPS, PL, and temperature dependent resistivity measurements are done to characterize the samples. Temperature dependent resistivity data of rGO thin films follow Efros-Shklovoskii variable range hopping (ES-VRH) model in the low-temperature region and Arrhenius conduction in the high-temperature regime. This wafer scale integration of rGO with c-sapphire and p to n type conversion at room temperature and pressure will be useful for large area rGO based electronic devices.
||Planned: Supplemental Proceedings volume