| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
J2, Electrically Pumped ZnO Nanowire p-n Junction Laser |
| Author(s) |
Sheng Chu, Guoping Wang, Jianze Zhao, Jieying Kong, Lin Li, Jingjian Ren, Jianlin Liu |
| On-Site Speaker (Planned) |
Sheng Chu |
| Abstract Scope |
In this contribution, a laser diode with p-type Sb doped ZnO nanowire and n-type ZnO film was fabricated. The vertically aligned nanowires were synthesized by Chemical Vapor Deposition (CVD) on n-type ZnO film. The ZnO thin film was grown by Molecular Beam Epitaxy. For the nanowires, Sb was used as dopant in the CVD furnace to realize p-type ZnO as well as forming the p-n junction. Nanowire field effect transistors were made and confirmed the p-type conductivity. Indium tin oxide and Au/Ti were used as p-type and n-type contacts, respectively. The Current-Voltage gave good rectifying behavior. Electron Beam Induced Current measurement confirmed the formation of p-n junction between the nanowires and film. The device yielded very strong ultraviolet emission. Multiple spike-like peaks emerged in the electroluminescence spectra when applied current was larger than 50 mA, which came from stimulated emission in the ZnO p-n junction laser. The threshold behavior in the plot of emission intensity versus injected current also confirmed the lasing behavior. Furthermore, the spacing between lasing peaks matched well with the vertical cavity length which consists of the ZnO films and the nanowires. These results suggest that this method for making ZnO nanowire laser is promising for future optoelectronics. |
| Proceedings Inclusion? |
Undecided |