About this Abstract |
Meeting |
2023 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnection
|
Presentation Title |
Phase-field Modeling of Electromigration-mediated Void Migration and Coalescence under Mechanical Compression |
Author(s) |
William Farmer, Kumar Ankit |
On-Site Speaker (Planned) |
Kumar Ankit |
Abstract Scope |
Electromigration (EM) occurs due to momentum transfer between the metallic ions of the interconnect and the electrons, which drift in the direction of the externally applied electric field. EM-induced defects can manifest as nucleation and growth of micro-voids and hillocks, grain boundary (GB) slits, and metallization, which lead to failure of interconnects and soldered joints. To gain an understanding of interconnect failure mechanisms, we develop a phase-field model, which encapsulates the physics of vacancy diffusion, to simulate the morphological evolution of voids under different operating conditions. Our simulations display the effects of elastic inhomogeneity, current densities, and back stress on the migration and coalescence of voids. Based on an in-depth parametric study, inferences are drawn to formulate strategies for which the void migration in interconnects can be suppressed. |
Proceedings Inclusion? |
Planned: |
Keywords |
Computational Materials Science & Engineering, Electronic Materials, Modeling and Simulation |