|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||050 Investigation of ZnO:N and ZnO:(Al,N) Films for Solar Driven Hydrogen Production
||Sudhakar Shet, Yanfa Yan, Nuggehalli Ravindra, Heli Wang, John Turner, Mowafak Al-Jassim
|On-Site Speaker (Planned)
ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100oC. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping.