|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||Hydrogen Plasma Annealing of E-Beam Evaporated SiO2 Tunnel Barriers
||Matthew Filmer, Gregory Snider, Alexei Orlov
|On-Site Speaker (Planned)
In the post-Moore’s law era, the use of quantum effects becomes increasingly important. Fabricating Metal-Insulator-Metal (MIM) tunnel junctions using a multi-step electron beam lithography approach, rather than the Dolan bridge process, allows for more flexibility in material choice. This allows for more desirable metals to be used, rather than being limited to metals with a substantial native oxide (Al, Cr, Ni) which can be used as a tunnel barrier. Single Electron Transistors (SETs) are used to study the interactions of Pt leads and e-beam evaporated SiO<SUB>2</SUB> barrier. Evaporating without an O<SUB>2</SUB> ambient gives a nonstoichiometric SiO<SUB>x</SUB> and the devices fail to exhibit the desired characteristics. Very thin, parasitic, PtO<SUB>x</SUB> layers are formed at interfaces between metal and dielectric can cause excessive barrier resistance. A post-fabrication anneal in a hydrogen plasma can increase the conductivity by at least three orders of magnitude. Anneal conditions are studied to optimize barrier performance.
||Planned: Supplemental Proceedings volume