|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||Strong Effect of Cu Electroplating Formulas on the Electroplated-Cu/Sn Interfacial Reactions
||Hsuan Lee, Chih-Ming Chen
|On-Site Speaker (Planned)
Electrochemical deposition is a technique widely used in the microelectronic industry and Cu is the most common material used for deposition. Various formulas of Cu electroplating are proposed with the addition of specific additives to overcome the deposition difficulty resulted from the geometrical variety of the substrate. In this study, we demonstrate that the Cu electroplating formulas also have a remarkable effect on the interfacial reactions between Sn and electroplated Cu substrate. The impurity residues originated from the additives were incorporated in the Cu deposits during electroplating, aggregated to the Sn/Cu interface during thermal annealing, and resulted in the formation of voids and some Cu-impurity complexes. The effect of impurity residues showed a strong dependence upon the formula and concentration of the additives.
||Planned: Supplemental Proceedings volume