|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||Ductile and Strong Cu-to-Cu Interconnection Using Ga-based Pastes for Applications on 3D IC and WBG Devices
||Che-yu Yeh, Yi-Kai Kuo, Shih-kang Lin
|On-Site Speaker (Planned)
Direct Cu-to-Cu interconnection is an important process for application in three-dimensional integrated circuit (3D IC) and wide band gap (WBG) device in electronic packaging industry. Cu-to-Cu interconnection can be made using thermo-compression, micro-bumping, or sintering with nano/submicron particles. However, thermo-compression requires high temperature and is time consuming, which makes it an expensive process. Micro-bumping is considered a cheap and fast process, but brittle and electrical resistant intermetallic compounds (IMCs) would form at the joints, which raises significant reliability concerns. Sintering with nano/submicron particles forms porous joints with poor thermal stability, which again does not meet the requirements in electronic industry. In this presentation, we demonstrate new materials and new processes for fabricating ductile and strong Cu-to-Cu joints using Ga-based pastes. This approach opens a door for a new concept for Cu-to-Cu interconnection, which can be applied for applications on 3D IC and WBG devices.
||Planned: Supplemental Proceedings volume