|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||111 Grain Boundary Electrical Properties of Ge-Doped Nd4 Ga2 O9
||Hirepan Chávez-Cárdenas, Hugo Joaquín Avila-Paredes
|On-Site Speaker (Planned)
Based on the high conductivity values of Nd<SUB>4 </SUB> Ga<SUB>2 </SUB> O<SUB>9</SUB>, a cuspidine-type conductor, it has been proposed as a good candidate as solid electrolyte in Intermediate Temperature-Solid Oxide Fuel Cells. Solid solutions of Nd<SUB>4 </SUB> Ga<SUB>2 </SUB> O<SUB>9 </SUB>and GeO <SUB>2</SUB> have shown superior conductivities. The aim of this work is to determine the correlation of the grain boundary electrical conductivity with the dopant (Ge) content (0 - 20 mol %). Samples were synthesized via a solid state reaction and a citration routes. Powders were compacted and pellets were prepared using conventional sintering. The structure of the samples was verified using X-ray diffraction and the average grain size of the samples was estimated based on scanning electron microscopy images. Impedance spectroscopy measurements of the samples were made under air to determine the contributions of the bulk and the grain boundary conductivities to the overall conductivity of the materials.