|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||2016 Functional Nanomaterials: Emerging Nanomaterials and Techniques for 3D Architectures
||Low Temperature Synthesis of Graphite on Ni Films Using Inductively Coupled Plasma Enhanced CVD
||Jaebeom Lee, Lanxia Cheng, Antonio T.Lucero, Kayoung Yun, Hoseok Nam, Jiyoung Kim
|On-Site Speaker (Planned)
Graphitic materials have received significant attentions as alternative for future nanoelectronics owing to their extraordinary electronic properties. Recently, there have been great efforts to grow graphene films at a reduced temperature using plasma enhanced CVD (PECVD) in order to be compatible with the current Si-based CMOS fabrication process. In this work, we investigated the growth mechanism of graphite on polycrystalline Ni films using IC-PECVD system. Our growth temperature dependent experimental results have suggested the good quality graphite films of a few nanometer, featured a low ID/IG ratio of 0.4, can be achieved at a temperature as low as 400℃. We have systematically studied the effect of growth parameters, including deposition time, plasma power and gas source ratios, on the quality of graphite films using characterization techniques such as Raman spectroscopy, TEM, XPS, SEM etc.