|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||High-speed Cu Electrodeposition and Its Solid-state Reaction with Sn-3Ag-0.5Cu
||Pei-Tzu Lee, Ying-Syuan Wu, Cheng-Hsien Yang, Hung-Cheng Liu, Cheng-En Ho
|On-Site Speaker (Planned)
Cu pillar bumps become an important joint configuration of the chip-to-substrate and chip-to-chip interconnections in 3D microelectronic packaging applications. Fabrication of Cu pillars via traditional electroplating (current density j ≈ 2 A/dm2) is a time-consuming process, it is necessary to improve throughput of this process through using high j (alternatively termed high-speed Cu electrodeposition). In the literature, data regarding the j effects on the microstructure of the solderability of various Cu platings is still quite lacking to date. The objective of this study is to explore the solid-solid reaction between Sn-3Ag-0.5Cu and electroplating Cu deposited via various j (2–10 A/dm2). The knowledge advances our understanding of the current density effect on the solderability and the thermal reliability of Cu pillars in packaging applications.
||Planned: Supplemental Proceedings volume