|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||Pulse Pb-UPD to Achieve a High Gap-filling of Cu Film Deposited on Trenched Ru/p-SiOCH/Si Substrate
||Jhih-Yan Wong, Jai-Lin Wu, Jau-Shiung Fang
|On-Site Speaker (Planned)
This paper reports the formation and properties of Cu film deposited on Ru/p-SiCOH/Si substrates with high aspect ratio trench using electrochemical atomic layer deposition (ECALD). The conformability and step coverage of the deposited Cu film were elucidated to reach high gap fill capability as Cu interconnects for microelectronics. ECALD can be used to fabricate Cu metallized film by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). Consequently, this work elucidates the effect of a fixed Pb-UPD potential and pulse Pb-UPD potential on the gap-filling capability and electrical properties of resulting Cu film on the substrate. Layer-by-layer deposition of Cu film formed at a Pb-UPD of -443 mV exhibited higher conformability, and step coverage, and (111) texture. The results of this study suggested that the ECALD can used for fabricating Cu interconnects.
||Planned: Supplemental Proceedings volume