|About this Abstract
||Materials Science & Technology 2011
||Solution-Based Processing for Ceramic Materials
||Synthesis and Characterization of Phase–Change Nanowires Confined in Periodic Mesoporous Silica
||Chandrasiri A Ihalawela, Martin E Kordesch, Gang Chen
|On-Site Speaker (Planned)
||Chandrasiri A Ihalawela
Phase-change memory materials (PCMM) are based on binary or ternary chalcogenides that exhibit rapid crystallization under electrical or optical pulse excitation. Among various methods to synthesize PCMM, sputtering is employed dominantly for device applications despite of its poor void-filling capability. In this paper, we report the synthesis of PCMM inside a nanoporous template using an electrochemical method. The mesoporous silica films are prepared by a sol-gel method using triblock copolymers as a structure directing agent through an evaporation-induced self-assembly process. Binary (Sb-Te, Ge-Te) and ternary (Ge-Sb-Te) semiconductors are grown inside the periodic mesoporous silica by electrodeposition. The confined semiconductor nanowires are characterized by energy dispersive x-ray spectroscopy, x-ray scattering, x-ray absorption fine structure, and transmission electron microscopy. The structure and phase-transition behavior due to the nanoscale confinement effect will be discussed. Our study sheds light on the structural and thermodynamic properties of semiconductors confined in nanosized pores.