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Meeting 2017 TMS Annual Meeting & Exhibition
Symposium Frontiers in Materials Science, Engineering, and Technology: An FMD Symposium in Honor of Sungho Jin
Presentation Title Low-Temperature and Pressureless Cu-to-Cu Bonding By Electroless Nickel Plating
Author(s) C. Robert Kao
On-Site Speaker (Planned) C. Robert Kao
Abstract Scope Thermocompression bonding, with the necessity of applying high temperature and pressure, is a popular method for high-density interconnections. However, such high temperature and pressure process could generate several issues such as warpage-induced defects and cracking of delicate thin chips. There is a clear trend toward bonding at lower temperature and pressure. A low-temperature, pressure-free Cu-to-Cu bonding process for 3D chip stacking by using electroless plating is reported. Instead of using solders, this novel bonding process leverages on the nature of autocatalytic features of electroless plating, which enables selective deposition and provides a uniform thickness of deposits, to join copper pillars on silicon dies. The electroless Ni plating was conducted under controlled pressure-driven flow conditions in a microfluidic delivery system to overcome the insufficient replenishment of the plating bath in such narrow gaps between the dies. This study successfully demonstrates the feasibility of using electroless Ni plating for 3D ICs applications.
Proceedings Inclusion? Planned: Supplemental Proceedings volume

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Interface Magnetism in La0.7Sr0.3MnO3/SrRuO3 Bilayers Integrated on Silicon
Interfacial Reactions at the Joints in the Bi2Te3-based Thermoelectric Modules
Low-Temperature and Pressureless Cu-to-Cu Bonding By Electroless Nickel Plating
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