|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||193 Deformation Mechanism of Nanocrystalline Copper Films during Uniaxial Relaxation Test at Room Temperature
||Saethavuth Angkhirasakhup Krasienapibal, Shoichi Nambu, Junya Inoue , Toshihiko Koseki
|On-Site Speaker (Planned)
||Saethavuth Angkhirasakhup Krasienapibal
Void formation and twinning mechanism in nanocrystalline Cu thin films having the grain size of 70-200nm were investigated. Cu thin films were deposited by DC-Magnetron Sputtering on polyimide substrates and uniaxial stress relaxation test was conducted at room temperature on each Cu thin film. Changes in void formation, grain size distribution and twin density were observed as a function of relaxation time. The results indicate that there is a transition of the accommodation process from twin mediated plasticity to void formation when the average grain size of Cu is around 100nm. Twinning mechanism dominates the relaxation in Cu film having larger average grain size, while void formation occurs preferentially in Cu film as average grain size decreases. In this research, the grain size, strain and strain rate dependences of twinning mechanism and the void formation process are discussed.