|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Computational Design and Simulation of Materials (CDSM 2018): Meso/Macroscale Simulations
||Multi Scale Modeling of Material Removal during Chemical Mechanical Polishing in Superconducting Integrated Circuits
||Vivian Ryan, Eric J. Jones, Kevin Mercurio, Thomas J. Knight
|On-Site Speaker (Planned)
New computational methods for scale bridging—from nano to macroscale--hold great promise for accelerating discovery of new materials and processes in high performance applications. Achieving this goal in superconductor electronics relies upon the fidelity of materials models and their ability to capture the connectivities between microstructure, processing, and performance parameters. This presentation focuses on advancements to characterize chemical-mechanical polishing mechanisms used in fabricating SC IC’s at fine length scales, for concurrently high and low modulus materials.
Specifically designed Genetic-Algorithm methodology is used to deliver guidelines for CMP-process optimization and materials-variability-aware design. The GA is built on a three-dimensional FEA engine that calculates local and global stress fields, with attention to slurry mechanics. Effects due to measured variability and interactions for materials properties are assessed. Measured AFM data demonstrate that the model framework can significantly improve the topographical profiles with reasonable overhead in run time and memory.
||Planned: Supplemental Proceedings volume