|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||Failure Mechanism of Ag Alloy Wire Bonding for Electronic Packaging under Electromigration Test
||Jui-Nung Wang, Tzu-Yu Hsu, Fan-Yi Ouyang, Jing-Yao Chang, Fang-Jun Leu, Hsiao-Min Chang
|On-Site Speaker (Planned)
Wire bonding technique has been widely utilized in semiconductor packaging industry for electrical connections. Silver wire bonding is considered due to its advantages including excellent electrical and thermal properties. However, not many studies have reported the electromigration (EM) induced failure of silver alloy wire. This study employed silver alloy wires with 25.4μm diameter bonded on 4μm thick aluminum metallization of die pads to investigate their interfacial reaction and failure mechanism under current stressing of 8 × 10^4A/cm2 at ambient temperature of 150 °C. The corresponding resistance versus time (RVT) curve for the samples shows two failure mechanisms including voids formation and the rapid growth of intermetallic compounds (IMCs). The resistance evolution of sample during current stressing and the microstructure of joint interface between silver alloy wire and aluminum bond pad were examined.
||Planned: A print-only volume