| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
JJ3, Growth Habit Control of Epitaxial Lateral Overgrown InP on Si Substrates by MOCVD |
| Author(s) |
Phil Mages, Nick Julian, Chong Zhang, Larry Coldren, Steve DenBaars, John Bowers |
| On-Site Speaker (Planned) |
Phil Mages |
| Abstract Scope |
In this work we revisited the oft-attempted idea of Epitaxial Lateral Overgrowth (ELO) of InP on Si. Owing to the large number of failed attempts at this goal in the past, we have refocussed our efforts on a few key growth and geometric relationships that seem to be held in common between InP-on-Si and the more successful c-plane III-Nitrides on sapphire ELO system. In contrast to most past attempts we do not focus initially on the all-important lateral/vertical growth ratio. Instead we consider the creation of an ELO film from the perspective of four key phases: Nucleation within the windows; Cresting of the III-V to the height of the dielectric; steady-state Lateral Propagation; and Film Coalescence. Each phase has different requirements for the sake of reducing defects, propagating laterally and producing a smooth film. Throughout this whole process we focus most closely on the detailed crystal habit of the growing films. We do this because in the past it has been found that lateral growth is easily stalled at some point during attempts to extend growth laterally until coalescence[1]. It has been found that the growth habit or cross-sectional faceting of the ELO material is strongly correlated to the orientation of the stripe opening [2]. We find that both of these results are due to the tendency of certain growth-limiting facets to form and have located parameter windows in which we can control the growth habits of the films during each phase of the ELO process. Namely, we present the results of varying stripe/mask geometry and orientation and discuss the most significant growth condition effects on the morphology of the films prior to and during coalescence. The result is the controllable production of stripes having sidewall geometries ranging from linear and smooth through strongly faceted and weakly roughened. We control profiles showing variation between the natural preference for (111)A and B planes and and mixed plane circumstances of differing value for continued lateral propagation and coalescence. Primarily we show that the cross-sectional growth habit of the ELO material is extremely sensitive to stripe orientation with misalignments as small as 5° being very significant. Secondarily we demonstrate that the effective local overpressure of Phosphorous (TBP) at the lateral growth front is most important to the sidewall formation and faceting at any growth rate or mask geometry. |
| Proceedings Inclusion? |
Undecided |