|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Materials for Energy Conversion and Storage
||Structural, Electrical and Dielectric Properties of Iron (Fe) Doped Gallium Oxide (Ga2O3)
||Swadipta Roy, Ramana V Chintalapalle
|On-Site Speaker (Planned)
Gallium oxide (Ga2O3) has a wide range of applications in electronics, gas-sensing, deep ultraviolet photo detectors and spintronics. The motivation to the present work was to understand and compare the effect of iron doping on the structural, dielectric and electrical properties with pure Ga2O3. Iron (Fe) doped gallium oxide compounds (Ga2-xFexO3 referred to GFO) were synthesized by solid state reaction method with variable Fe concentration (x=0.00-0.30). Structural characterization reveals that GFO crystallizes in β-Ga2O3 phase. Electron microscopy imaging analyses reveal the evolution of a smooth microstructure along with grain size reduction with increasing Fe concentration. Enhanced dielectric and electrical properties have been achieved with increasing Fe content while optimizing the sintering temperature. Spreading factor and relaxation time calculated are in the range of 0.57-0.76 and 10-4 s, respectively. The structure-property relationship and implications of this investigation to tune the properties of Ga2O3 by incorporating transition metal ions will be discussed.