|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Ultrafine Grained Materials IX
||Developing Atomistically-Informed Interface Dislocation Dynamics (AIDD) Simulator
||Jian Wang, Shuai Shao, Irene J. Beyerlein, Amit Misra
|On-Site Speaker (Planned)
Future advancements in energy technologies demand novel materials that tolerate extreme environments that exceed the capability of even the most advanced materials today. Nowadays, the focus of materials’ design has shifted from processing to the architectural control of their constituents. Materials with high-density interfaces are among the most promising candidates, because of their interface-dominated properties that are far superior to those of their coarse-grained counterparts. The conventional materials models follow the ‘constituent-dominated paradigm’ and are unable to capture the physics of unit mechanisms at interfaces. Atomistic modeling can elucidate the unit processes occurring within/at/across interfaces but cannot predict macroscopic properties. Dislocation Dynamics (DD) models have the unique advantage of exploring the dislocation activity in single crystal, but typically do not incorporate the role of interfaces. This work combines the advantages of the atomistic and DD models, and focuses on characterizing and passing the interface-dislocation correlation from atomic-scale to meso-scale.