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Meeting Materials Science & Technology 2019
Symposium Advanced Microelectronic Packaging, Emerging Interconnection Technology, and Pb-free Solder
Presentation Title Predicting Electromigration-mediated Damage in Interconnects Using Phase-Field Models
Author(s) William Farmer, Kumar Ankit
On-Site Speaker (Planned) William Farmer
Abstract Scope With a continuous downscaling of integrated circuits, interconnects are subject to increasingly high current densities. However, a sufficiently large electric current density can impart momentum to the metal ions triggering atomic diffusion, known as electromigration (EM), leading to the generation of micro defects, for e.g. voids and hillocks and ultimately causing circuit failure. Preventive measures currently adopted to mitigate EM-induced damage are unreliable as they are typically framed based on limited insights provided by 2-D imaging of the microstructural degradation. Here, we adopt a 3-D phase-field approach to computationally investigate the EM-mediated failure mechanisms in polycrystalline interconnects. An extensive parametric study reveals different modes of failure, such as grain-boundary slitting, surface drift, and the mixed-mode, while the critical role of grain-boundary curvature-driven coarsening in instigating damage is analyzed. We anticipate that the insights gained from this study will provide guidance for mitigating EM damage in polycrystalline lines in the future
Proceedings Inclusion? Definite: At-meeting proceedings


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