| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
L1, Single-Layer MoS2 Transistors |
| Author(s) |
Branimir Radisavljevic, Aleksandra Radenovic, Jacopo Brivio, Andras Kis |
| On-Site Speaker (Planned) |
Andras Kis |
| Abstract Scope |
We have exfoliated single layers 6.5 Angstrom thick from bulk crystals of semiconducting MoS2, using the micromechanical cleavage technique commonly used for the production of graphene. Our nanolayers are mechanically and chemically stable under ambient conditions. Unlike graphene, single layer MoS2 is a direct band gap semiconductor with a 1.8eV gap. We have fabricated transistors using conventional electron beam lithography. Our electrical contacts have ohmic behaviour. From our measurements we extract single layer mobility in the 200-800 cm2/Vs range, higher than 2nm thin-film silicon or graphene nanoribbons with 400meV band gap. All our transistors are n-type. By incorporating a thin layer of high-k dielectric HfO2 and top gate we can control our transistor in a local way and observe room temperature current on/off ratio above 10^8 and extremely low leakage currents (25 fA/um). Our results shown that single-layer MoS2 could be suitable for the fabrication of electronic circuits and could act as an alternative to graphene in applications that require materials with a band gap. Being a thin, transparent semiconducting material, MoS2 monolayers also present a wealth of new opportunities in areas that include mesoscopic physics, optoelectronics and energy harvesting. |
| Proceedings Inclusion? |
Undecided |