|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||L-64: Synchrotron X-ray Study of Sn Whisker Growth Induced by Electromigration
||Cheng-En Ho, Wan-Zhen Hsieh, Pei-Tzu Lee, Cheng-Hsien Yang
|On-Site Speaker (Planned)
Tin (Sn) is a conducting material and the growth of Sn whiskers becomes a serious reliability concern owing to the applications of Sn-based solder and surface finish over the fine-pitch circuits in microelectronic packages. Sn whisker growth refers to a creep phenomenon in which both stress generation and relaxation take place simultaneously. A stress gradient can be generated in a Sn film with the Sn/Cu reaction, providing the driving force of a long-range Sn diffusion needed for whiskering. To advance fundamental understanding of the whiskering mechanism, electromigration testing on a Sn Blech structure is usually employed to accelerate the growth of Sn whiskers. In this study, we conducted an in-situ analysis via synchrotron X-ray radiation and electron backscatter diffraction (EBSD) to measure the local stress level, stress evolution, crystallographic orientation of a Sn Blech structure under electron current stressing, to gain better understanding of Sn whiskers.
||Planned: Supplemental Proceedings volume