| Abstract Scope |
Band alignment and charge transfer at complex oxide interfaces is critical to tailoring their diverse functionality. Depending on the interface, Ohmic- or Schottky-like charge transfer interfaces emerge. Here, I present a method for predicting band alignment and charge transfer in ABO3 perovskites, thereby explaining recent experimental observations where previously established rules for simple semiconductors fail. I discuss a prototypical interface comprised of SrBO3 (metal; B=V, Nb and Ta), and semiconducting SrTiO3. For B=Nb and Ta significant charge transfer to SrTiO3 occurs due to higher energy Nb and Ta states relative to Ti. This induces a high mobility metallic interface, i.e., Ohmic contact. Conversely, for B=V there is no charge transfer to SrTiO3, i.e., Schottky contact. This work opens the door to integrating ABO3 perovskites into a range of practical devices. Supported by the U.S. D.O.E., Office of Science, BES, MSED using resources at NERSC and OLCF. |