About this Abstract |
Meeting |
2023 TMS Annual Meeting & Exhibition
|
Symposium
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Advanced Functional and Structural Thin Films and Coatings & Honorary Palkowski Session
|
Presentation Title |
Efficient Silicon Room-Temperature Bandgap Emission Related To Correlated Electron-Hole Recombination |
Author(s) |
Sufian Abedrabbo, Elmostafa Benchafia, Ali Dhaif Allah Abdullah, Anthony T. Fiory, Nuggehalli M. Ravindra |
On-Site Speaker (Planned) |
Sufian Abedrabbo |
Abstract Scope |
Ordinary Czochralski silicon (CZ-Si) is known to be inferior in radiative recombination at the bandgap. Interfacing CZ-Si with sol-gel based silica coatings improves the bandgap emission significantly by introducing random strain fields; such results have been reported in several publications and presentations in the literature. The reported work clearly modeled the emission band by a combination of uncorrelated electron-hole and phonon three particle process. In this work, we report an enhancement in carrier recombination from p-Si photoluminescence that is unorthodoxly dominated by correlated carrier recombination resulting in photons of energy hυ with intensity of spectral form ε1/2 associated with correlated carrier recombination, where ε = hυ − EB + Eexc + ETO, EB is the band gap, Eexc is the exciton binding energy, and ETO is the transverse optical phonon energy. This work presents photoluminescence, XRD and imaging results and present the computational proof of electron-hole correlated carriers' recombination. |
Proceedings Inclusion? |
Planned: |
Keywords |
Thin Films and Interfaces, Characterization, Other |