|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Mechanical Behavior at the Nanoscale III
||Residual Stress in Thin Films: Effect of Growth Rate and Grain Size
||Eric Chason, Alison Engwall, Zhaoxia Rao
|On-Site Speaker (Planned)
Thin films develop residual stress during their growth. The magnitude depends on a balance between different kinetic processes occurring on the surface and at the grain boundary. Grain boundary formation generates tensile stress while insertion of atoms into the grain boundary makes the stress more compressive. This balance is affected by the growth conditions (e.g., temperature, growth rate) and the microstructure (e.g., grain size). To understand how these processes influence the stress development, we have measured stress evolution during growth at different rates using a wafer curvature technique. Cross-sectional measurements after the growth enable us to determine the grain size at different stages of the growth. The results enable us to create a map of stress vs growth rate and grain size that shows the interaction of these parameters. The data is analyzed in terms of a kinetic model that we have developed that includes all these parameters.
||Planned: A print-only volume