SnSe single crystal has been reported to exhibit a high figure of merit, ZT = 2.6 at 930 K, this makes the practical application of thermoelectric materials realized. Unfortunately, no similar result on single crystal SnSe has been reported since its publication two years ago. To study its intrinsic properties, a series of associated SnSe single crystals of pristine, deficiency, and element doping has been fabricate for extensive study. The pristine high-quality SnSe single crystals grown by Bridgman method show a higher mass density and thermal diffusivity (~0.48 mm2/s as compared with 0.22 mm2/s reported) than earlier report, the peak ZT at 850 K along c axis is about 1. For extra Se doped SnSe1+x (x=0.005-0.01), the thermal conductivity of SnSe1+x is higher than the pristine SnSe crystal. To examine the effect of deficiency of Se, SnSe1+x single crystals with x=-0.055 and -0.01 are will be reported as well.