Abstract Scope |
Wide bandgap materials such as β-Ga2O3 have been receiving significant research attention in the recent period due to their high number of potential applications in electronic and optoelectronic devices. By alloying β-Ga2O3 with elements such as Al, the bandgap can be further increased, enabling new possible applications of β-(AlxGa1-x)2O3 compounds in ultra-high-power electronics, ultra-short wavelength optoelectronics, and others. In this work, the sol-gel spin coating approach has been applied in the fabrication of β-(AlxGa1-x)2O3 epitaxial films with different Al concentrations on Al2O3 single-crystal (sapphire) substrates. Through the comprehensive analysis of the structural, chemical, and optical properties, the effect of Al concentration, rare-earth doping, and substrate orientation (including c-, a-, and r-sapphire substrates) on the bandgap tuning of the prepared films was discussed. The obtained results demonstrate the sol-gel spin-coating technique's great potential for fabricating epitaxial β-(AlxGa1-x)2O3 film with engineered bandgap energies. |