|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Frontiers in Materials Science, Engineering, and Technology: An FMD Symposium in Honor of Sungho Jin
||Tuning of Semiconductor-to-metal Transition in Epitaxial VO2 through Strain Engineering in the Heterostructures
||Adele Moatti, Jagdish Narayan
|On-Site Speaker (Planned)
We have studied semiconductor-to-metal transition (SMT) characteristics of VO2 in different epitaxial heterostructures of VO2(011)/TiO2(110)/TiN(100)/Si(100) and VO2(001)/TiO2(101)/TiN(111)/c-sapphire. The abrupt change in electrical property and infrared transmittance of VO2 lend themselves to many interesting applications. We have integrated VO2 through TiO2/TiN buffer layers to Si(100) and c-sapphire. The epitaxial TiO2 was achieved by novel method of TiN oxidation. The transition temperature of VO2 depends on the epitaxial growth characteristics and the residual misfit strains associated with the TiO2/VO2 interface. The rutile epilayers with different out-of-plane orientations were grown and used as a platform for epitaxial VO2 with the aim of manipulating its microstructure and electrical properties. It has been shown that the SMT can be tuned through microstructural engineering. These results facilitate the VO2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. Moatti et al. Acta Materialia 2016; 103:502.
||Planned: Supplemental Proceedings volume