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Meeting 2011 Electronic Materials Conference
Symposium 2011 Electronic Materials Conference
Presentation Title M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers
Author(s) Roy Chung, Erin C. Young, Dan Haeger, Steven P. DenBaars, James S. Speck, Dan Cohen
On-Site Speaker (Planned) Roy Chung
Abstract Scope Semipolar substrates offer a number of advantages for UV emitting AlGaInN based laser diodes, including higher gain, an ability to operate with nearly transverse electric (TE) optical modes, and an ability to provide pseudo-substrates with tailorable lattice constants, something unavailable from bulk c-plane AlN substrates. When high aluminum content buffer layers are grown on semipolar bulk GaN substrates, strain relaxation via glide of threading dislocations forestalls cracking, with the MD segments constrained to the heterointerface, allowing subsequent growth of laser quality material. Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N layers with 0.1 < x < 0.5 have been grown on (20-21) bulk GaN substrate by metal organic chemical vapor deposition (MOCVD). InGaN/GaN multiple quantum wells (MQW) were grown on top of 1.2 μm thick relaxed Al<SUB>0.22</SUB>GaN<SUB>0.78</SUB>N on (20-21) GaN and directly on GaN. While strained MQW on GaN clearly showed TDs from cathodoluminescence (CL), MQW on relaxed AlGaN showed dark lines, suggesting the generation of MDs and disappearance of TDs. As the aluminum composition in AlGaN increased, single Al<SUB>0.4</SUB>Ga<SUB>0.6</SUB>N layer started showing cracks along c-projection direction at about 300 nm. This could be due to too much strain and gliding of TDs is no loner enough to release the strain for high aluminum content AlGaN directly grown on GaN. We have also grown AlGaN on (20-21) GaN, step grading to higher aluminum composition. This allows relaxation of AlGaN without generation of new TDs, ultimately leading to high quality AlGaN template for laser diode growth. On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated with the presence of MDs. This is a clear indication of the relaxation of each AlGaN layer. When more than 1 μm thick Al<SUB>0.45</SUB>Ga<SUB>0.55</SUB>N layer was grown on the graded AlGaN, the crack healing was also observed. The diode operation of near UV light emitting diodes (λ~385 nm) on the relaxed buffer has been shown and is a promising result for device application of relaxed AlGaN template. In this study, we report on the growth of semipolar AlGaN with high aluminum content on bulk (20-21) semipolar GaN. Single AlGaN and step graded AlGaN layers were grown by MOCVD and characterized by various analytical techniques such as CL and x-ray diffraction to understand the relaxation mechanisms in semipolar AlGaN layer.
Proceedings Inclusion? Undecided


A1, Nitride Film Growth by Migration Enhanced Afterglow (MEAglow)
A2, Observation and Elimination of Indium Surface Segregation
A3, Depth Resolved Strain and Composition Studies on InGaN and AlInN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
A4, Low Temperature p-GaN Grown by NH3-MBE
A5, Epitaxial Lateral Overgrowth of Aluminum Nitride by Molecular Beam Epitaxy
A6, Effect of Superlattices and Surfactants on AlN Homoepitaxy by MBE
AA1, Self-Assembled, Tensile-Strained III-V Islands on (110) and (111)A Substrates
AA2, Atomic Structure of InAs/InGaAsP/InP(001) Quantum Dashes and Decomposition of the InGaAsP Matrix Material
AA3, Photoluminescence and Thermal Carrier Activation in Type-II ZnTe/ZnSe Quantum Dots
AA4, Temperature Dependent Photoluminescence of Ensemble and Single InAs/InGaAlAs Quantum Dots
AA5, Atomic Structure and Optical Properties of Submonolayer InAs/GaAs Depositions
B1, Phonon Engineering through Crystal Chemistry
B2, Ca3AlSb3 and Ca5Al2Sb6; Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery
B3, The Impact of Nano-Inclusions Introduced by Mechanical Alloying on Thermoelectric Transport in Pb1-xSnxTe: Experimental Results and Theoretical Predictions
B4, Reevaluation of PbTe1-xIx as High Performance n-Type Thermoelectric Material
B5, The Universal Optimal Seebeck Coefficient for Maximum Power Factor
BB1, Local Density of States and Semimetallic Behavior of Rare Earth-V Nanoparticles Embedded in a III-V Semiconductor Matrix
BB2, A Simple Thermodynamic Model for the Doping and Alloying of Nanoparticles
BB3, Band Structure and Thermal Escape Processes of Strained InGaSb/AlGaSb Quantum Wells
BB4, Formation and Templating of III-V Semiconductor Nanospikes by Focused Ion Beams
BB5, Structural and Optical Characterization of Growth Pause Induced Ripening of InAs/GaAs Quantum Dot Heterostructures.
C1, Scanning Gate Spectroscopy: A New SPM Technique for Nano-Devices on Oxide Surfaces
C2, Measurement of Nanoscale External Quantum Efficiency of Plastic Solar Cells by Photoconductive Atomic Force Microscopy
C3, Role of Ethylene on Thermal and Chemical Stability of TiO2(110)
C4, Combined XSTM and High Resolution XRD Study for Quantitative Structural Descriptions of Type-II Superlattice IR Detectors
C5, In Situ Transmission Electron Microscopy and Photoluminescence Study of Ge-Core/SiGe-Shell Nanowires
C6, Local Strain Characterization of MEMS-Based Silicon Beams by Raman Spectroscopy
CC1, In Situ High-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth on 6H-SiC(0001)
CC2, Electrical Characterization of Graphene-Semiconductor Heterojunctions
CC3, Correlated Conductivity and Work Function in Epitaxial Graphene
CC4, Response of Graphene-Based Field Effect Devices Exposed to Gamma and Neutron Irradiation
CC5, Surface Adsorption and Charge Transport in Epitaxial Graphene on 6H-SiC
CC6, Graphene Reinforced Composites as Efficient Thermal Interface Materials
CC7, Frequency Domain THz Characterization of Graphene
CC8, Charge Carrier Dynamics in Graphene: Suspended vs. Supported
CC9, Polariton Enhanced IR-Reflectivity of Epitaxial Graphene on SiC
D1, Tuning of Plasmonic Cavity Resonances Using Atomic Layer Deposition
D2, Tunable Infrared Absorption of Nano Plasmonic Structures
D3, In Situ Spectroscopic Ellipsometric Analysis of Thin Silver Films Deposited Using DC Magnetron Sputtering and HiPIMS Techniques
D4, Second Harmonic Generation in a Metamaterial Resonating at Fundamental and Second Harmonic Frequencies
D5, Optical Dispersion of Amorphous Germanium Thin Films as a Function of Thickness and Deposition Parameters
D6, LATE NEWS: Optical Properties of FIB-Fabricated Metallic Nanostructure Arrays on Compound Semiconductor Surfaces
DD10, Characterization of L21-Ordered Full-Heusler Co2FeSi1-xAlx Alloy Thin Films Formed by Silicidation Technique Employing Silicon-on-Insulator Substrate
DD1, Enhanced Spin Injection and Spin Lifetimes in Graphene
DD2, Enhancement of Spin Torque by Proximity to Other Domain Walls
DD3, Spin Seebeck Effect in MnAs/GaMnAs Bilayers
DD4, Universal Valence-Band Picture of the Ferromagnetic Semiconductor GaMnAs Obtained by the Resonant Tunneling Spectroscopy
DD5, Fe3O4/GaAs Hybrid Ferromagnet/Semiconductor Nanostructures
DD6, Magnetic Depth Profile of Mn-Graded (Ga,Mn)As
DD7, Manganese-Doping of Group IV Semiconductor Surfaces and Nanostructures
DD9, Formation of Half-Metallic Ferromagnet Tunnel Junctions of Co2FeSi/SiOxNy/Si Using Radical Oxynitridation Technique
E1, Quantum Dot Red/Green/Blue/White Light-Emitting Electroluminescent Devices with a Low Turn-on Voltage and High Brightness
E2, Fabrication of Flexible Single-Crystal Devices on Electrically-Conductive Substrates
E3, A Compensation Mechanism for Flexible and Electrically Stable Solution-Processed Organic Field-Effect Transistors
E4, Ambipolar Charge Carrier Transport in Organic Thin Films
E5, Application of Vapor Forms 1-Octanethiol Coated Copper Conductive Ink for Ink-Jet Printing
E6, LATE NEWS: Impact of Mechanical Stress on Stability of Flexible Amorphous Silicon Thin Film Transistors
EE1, Quantitative Analysis of Lattice Disorder and Crystallite Size in Organic Semiconductor Thin Films, and Implications for Charge Transport
EE2, Following Charge-Trapping Chemical Reactions in Pentacene Films by Selective Chemical Doping and Wavelength-Resolved Electric Force Microscopy
EE3, Molecular Contact Doping for Organic n-Channel TFTs and Fast Complementary Circuits
EE4, Charge Trapping and Localization Due to Paracrystalline Disorder in High Performance Polymeric Semiconductors
EE5, Probing the Microstructure of Buried Polymer-Polymer Interfaces with Thin Film Transistors
EE6, LATE NEWS: Formation of Kirkendall Voids and its Role in the Performance of Contact to P-Type Silicon Nanowires
EE7, Materials Requirements for Low-Voltage Flexible Organic Transistors and Circuits
EE8, Organic Transistor-Based Memory
EE9, From Nano- to Micro-Scale Control of Crystalline Order in Soluble Small-Molecule Organic Semiconductors
F1, Design and Growth of InAs Quantum Dash Based MWIR VECSELs
F2, Influence of Surface Patterning on Droplet Epitaxy and Photovoltaic Properties of InAs/GaAs Quatum Dots
F4, Visible Light Emitting Diodes Based on Self-Assembled In0.5Ga0.5As Quantum Dots on GaP
F5, Large Area Growth of GaAs Solar Cell Based on Nanowire Structure
F6, Output Polarization Dependence of Asymmetric Current Injection VCSELs on Crystalline Direction and Ion Implantation
FF1, n+GaAs Sheet Resistance Saturation and Implications to BiHEMT Growth
FF2, Metamorphic p-i-n InGaAs Photodetectors Grown by MOCVD
FF3, Optimized Growth Condition and Dot Geometry in InAs/InGaAs Sub-Monolayer Quantum Dot Infrared Photodetector
FF4, Epitaxial Growth of InGaAs/InAlAs/InP Quantum Cascade Lasers by Metalorganic Chemical Vapor Deposition
FF5, GaInNAsSb Quantum Wells with Strain-Compensating GaAsP Layers for GaAs-Based 1.55 μm Lasers
G1, Molecular Beam Epitaxial Growth of Zn3P2/GaAs and ZnS/GaAs Heterostructures for Photovoltaics
G2, ZnSnN2: A New Earth-Abundant Semiconductor for Solar Energy Conversion
G3, Electrodeposition of Indium Sulfide Films from Organic Electrolytes
G4, Spatially Resolved Responses of Nanoscale Photovoltaic Model Devices
G5, Challenges of Hall Measurements on Low Mobility Materials and How to Overcome Them
GG1, Highly Polarized Spontaneous Emission from Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes
GG2, Characterization of Green Semipolar (20-21) GaInN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Freestanding GaN Substrate
GG3, Optical Emission Patterns in Semipolar (11-22) GaN Light Emitting Diodes on Planar m-Plane and Etched r-Plane Sapphire
GG4, Microscopic Optical Properties of Semi-/Nonpolar GaN with InGaN SQWs on Top Grown Directly on Patterned Si Substrate
GG5, Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications
H10, Growth and Characterization of npn-GaN/InGaN/GaN Double-Heterojunction Bipolar Transistors on a Free-Standing GaN Substrate
H1, Quantization and Bias Effects on Gate Capacitance of Scaled GaN HFETs
H2, Direct Correlation between Access Region Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors
H3, Temperature Dependent Off-State Degradation of AlGaN/GaN HEMTs
H4, Noise Measurements of Nanowire FET Sensors for Sensitivity Determination
H5, Piezoresistive Microcantilever with Embedded AlGaN/GaN HFET for Sensing Applications
H6, N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively
H7, Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMT Using a Polarization-Induced 2D/3D Hybridized Channel Design
H8, Fabrication of AlGaInN/GaN Transistors with ft and fmax Exceeding 100 GHz
H9, Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
HH10, Strain: A New Strategy of Tuning Doping Site and Type in Semiconductors
HH1, Surface Donors Dominate the Conductivity of In2O3 Thin Films
HH2, The Role of Native Point Defects in Highly n-Type Degenerate (Zn,Ga)O Films
HH3, High Resolution Photoluminescence Spectroscopy of Donors in Undoped and Indium-Doped ZnO Grown by Metalorganic Vapor Phase Epitaxy
HH4, Trap-Limited Li Diffusion in Melt Grown ZnO
HH5, Identification of Acceptor States in Li Doped ZnO Using Nanoscale Depth-Resolved Cathodoluminescence Spectroscopy
HH6, Zn(Mg,Cd)O Epitaxy for Optoelectronic Applications
HH7, ZnO and Al2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition and Plasma Enhanced Chemical Vapor Deposition
HH8, Thin Films of ZnO Prepared by Reactive Pulsed Arc Molecular Beam Deposition
HH9, Atom Probe Tomography of ZnO Nanowires
I10, Highly Ordered Vertical Silicon Nanowire Arrays Embedded in Polymer for Thin-Film Thermoelectric Devices
I1, A Tubular Thermoelectric Generator with Piled Conical Rings Structure
I3, Thermoelectric Properties of ErSb:InxGa1-xSb Thin Films Grown by MBE
I4, Nanoparticle Size Dependence of the Electrical, Thermal, and Optical Properties of Er-Doped In0.53Ga0.47As
I5, Improving Thermoelectric Power Generation Efficiency with Epitaxial TbAs/III-V Nanocomposites
I6, The MOCVD Growth of Erbium Antimonide Nanocomposite Embedded III-V Host Materials and Characterization for Thermoelectrics
I7, Cross-Plane Transport Properties of p-Type La0.67Sr0.33MnO3/LaMnO3 Perovskite Oxide Metal/Semiconductor Superlattices
I8,Temperature-Dependent Thermal Properties of HgCdTe Superlattices
I9, Development of III-Nitride Materials for Thermoelectric Applications
II10, Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices
II1, Absence of Electron Accumulation at InN(11-20) Cleavage Surfaces
II2, MBE Growth Study of AlInN and AlInN/GaN Heterostructures for Intersubband Device Applications
II3, Room Temperature near-Infrared AlInN/GaN and AlGaN/GaN Quantum Well Photodetectors Grown by Molecular Beam Epitaxy
II4, Characterization of Lateral and Vertical Inhomogeneities in InAlN Grown by Plasma-Assisted Molecular Beam Epitaxy
II5, Electrical Tuning of InGaN Quantum Dots in GaN Photonic Crystal Cavities
II6, Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE
II7, Piezoresponse Force Microscopy of InGaN/GaN Quantum Dots
II8, InGaN/GaN Core-Shell Nanorod Arrays Grown by Selective Area Growth for InGaN-Based Light Emitting Diodes
II9, Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN Templates
J10, Role of Defect States in Charge Transport in Semiconductor Nanowires
J1, Molecular Surface Passivation Effects on Indium Oxide Nanowire Transistors
J2, Electrically Pumped ZnO Nanowire p-n Junction Laser
J3, Electrical Transport Study of Schottky Barrier Based ZnO NanoWire FETs
J4, ZnO Nanowire-Based Field Effect Transistors with Non-Volatile Memory Function Using Mobile Protons
J5, Raman and Electrical Probes of Carrier Concentration in Si-Doped GaN Nanowires Grown by Plasma-Assisted MBE
J6, Electrodeposited InSb Nanowires: Structural Properties and Transistor Performance
J7, Electron Transport in One-Dimensional InAs Nanowire Transistors
J8, Electrical Properties of Axial and Radial Nanowire pn-Junctions – A Comparison
J9, GaAs Core-Shell Nanowire-Based Vertical p-n Diodes
JJ1, Growth Investigations of Lattice-Matched III/V Compound Materials on (001) Si Substrate for Optoelectronics
JJ2, Coalescence Phenomena in Narrow-Angle Stripe Epitaxial Lateral Overgrown InP by MOCVD
JJ3, Growth Habit Control of Epitaxial Lateral Overgrown InP on Si Substrates by MOCVD
JJ4, Integration of InAs/GaAs Nano/Micro Structures with Silicon by Selective Area Epitaxy
JJ5, The Electrical Nature of Structural Defects in InSb Synthesized by Molecular Beam Epitaxy on Si (100) and GaAs (100)
JJ6, Low Leakage Current AlGaN/GaN HEMTs on Si Substrates with Partially Mg-Doped GaN Buffer Layer by MOCVD
JJ7, Effect of Growth Temperature on Composition of InAlN Alloy Grown by GSMBE on Si (111)
JJ8, Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned Si for HgCdTe Based Infrared Device Applications
K1, The Evolution of the SiC Power MOSFET from Lab Demonstration to Commercial Product
K2, A Bondable Metallization Stack that Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating above 500 C
K3, High-Low Temperature Performance of 20 A, 1200 - 1700 V 4H-SiC Power MOSFETs
K4, Improved Microstructure and Ohmic Contact of Nb Electrode on N-Type 4H-SiC
K5, Slow Thermal Emission from Traps in 4H-SiC Epilayers
K6, Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC Substrates and Axial Slices with Associated Stacking Faults
K7, Stacking Faults Originating from BPDs in High-Doped Buffer Layers
K8, Step Controlled Epitaxy on 4° and 1° Off-Cut 4H and 6H-SiC Substrate Using Dichlorosilane
K9, Defect Structures of B12As2 Single Crystalline Epitaxial Layers on Off-Axis (0001) 4H-SiC Substrates
KK10, Environmental Stabilization and Functionalization of ZnO Nanobridge Sensors Fabricated Using Carbonized Photoresist
KK1, Size Effects in Ni Catalyzed Germanium Nanowire Growth
KK2, Effects of Annealing on Sub-Eutectic Heteroepitaxial Growth of Germanium Nanowire on Si (111) Substrate
KK3, Catalyzed Vapor-Liquid-Solid Oxidation: Germanium Oxide Nanowires
KK4, Catalyst Proximity Effects on the Synthesis of Si Nanowires for In Situ Scanning Electron Microscope Li Intercalation Experiments
KK5, A-Si / Si Nanowire Hybrid Photovoltaics
KK6, Internal Quantum Efficiency in Nanorod LED Arrays Created by Top-Down Techniques
KK7, Electrochemically Deposited Branched Indium Antimonide (InSb) Nanowire Arrays as “In-Situ” Anti-Reflective Structures
KK8, Aligned Assembly of Nanowire Arrays with Intrinsic Control
KK9, Nanostructure Decorated AlGaN/GaN HEMTs for Chemical Sensing
L1, Single-Layer MoS2 Transistors
L2, Role of Optical Phonon in Graphene Nanoribbon Tunnel Transistors: Strategy for Abrupt Switching from Material's Point of View
L3, Fabrication of Top-Gated Sub-10 nm Epitaxial Graphene Nanoribbon FETs Using Hydrogen Silsesquioxane(HSQ)
L4, Semiconducting Graphene: Prospects and Challenges
L5, Influence of Trapped Single Charges in Single Walled Carbon Nanotube Transistor with SiNx /Al2O3 Double Wrapped Layers
L6, Deposition and Characterization of AlN Dielectric Films on Graphene
L7, Graphene as a Heat-Spreading Layer in Blue LEDs
L8, RCA Clean Assisted Transfer of CVD Grown Graphene
L9, LATE NEWS: Electrical and Materials Reliability Issues in Single-Walled Carbon Nanotube Interconnect Devices
LL10, 3C-Silicon Carbide Epitaxy by Means of Silicon Carbide-on-Silicon Wafer Bonding
LL1, Electrochemical Etched InP Porous Layer Formation for Layer Transfer
LL2, Ion-cut Transfer of InP-Based High Electron Mobility Transistors Using Adhesive Bonding
LL3, Investigation of PECVD Silicon Nitride Deposition on Porous Si
LL4, Double Layer Transfer Made by the Smart Cut™ Technology and Embedded Porous Silicon Layer
LL5, LiNbO3 Thin Single Crystal Layer Transfer by Smart Cut™ Technology
LL6, InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Transistors
LL7, Electrical Conductivity of Directly Bonded Silicon/Germanium Hetero-Structures
LL8, Interface Barrier Height Reduction in Wafer Bonded n-GaAs / n-GaAs by Sulfur Passivation Methods
LL9, Comprehensive Investigation of Ge-Si Bonded Interfaces Using Surface Activation
M10, Effects of Dislocations on Luminescence in m-Plane InGaN Quantum Wells
M1, A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes
M2, Impact of Extended and Point Defects on InGaN LED Efficiency
M3, Effect of InxAl1-xN Electron Blocking Layer on Quantum Efficiency in Visible Light-Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition
M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers
M5, Low Dislocation Density Al0.32Ga0.68N by Overgrowth of Patterned Templates
M6, Enhancement of Hole Transport and Carrier Distribution in InGaN/GaN Multiple Quantum Wells by Controlling Indium Content of p-Type Layer in Visible Light-Emitting Diodes
M7, P-Side-Down, Ga-Polar, Green-Emitting Single Heterostructure LEDs
M8, Characterization of Green Semi-Polar (10-11) GaInN/GaN Light Emitting Diodes
M9, Optical Properties of Molecular Beam Epitaxy Grown High in Content (~20%) InGaN film Emitting in Green (540 nm)
MM10, Resistance and Transparency Study of Contacts to p-Type GaN
MM1, Surface Preparation of GaP for Regrowth on Epitaxially-Inverted Structures on Silicon
MM2, Oxide Surface Passivation of Ge for Optoelectronic Applications
MM3, Oxygen-Enhanced Wet Thermal Oxidation of In0.53Ga0.47As
MM4, Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers
MM5, Fabrication of GaAs Micromechanical Resonator Arrays for Single Molecule Detection
MM6, Hydrogenated Amorphous Silicon-Carbon Alloy Thin Films for Uncooled Microbolometers
MM7, Metal and Semiconductor Contacts (Si, V, Au) to Organic Molecules: The Fullerene Model System
MM8, Silicide/Silicon/Silicide nanowire Heterostructures with FET devices
MM9, Improved Electrical Properties of N-Contacts to N-face GaN for Vertical Light-Emitting Diodes by Laser-Annealing
N1, Preparation of the Red Phosphor Nanoparticle Films for the Application to Silicon Solar Cells
N2, GaAs Nanopillar Photovoltaics Based on Catalyst-Free Patterned Growth
N3, Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding
N4, Thin Film III-V Photovoltaics on Flexible Metal Substrates and Defect Mitigation Strategies
N5, LATE NEWS: Low Atomic Weight Transition Metal Doping of Co-Phased TiO2
N6, Towards >15% Solar Cells on Metal Foils: Heteroepitaxial Crystal Silicon on Alumina
N7, High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH3-MBE
N8, Design Principles for Light-Trapping in Thin Silicon Films with Embedded Dielectric Nanoparticles
N9, Single Crystalline Si Substrate Growth by Lateral Diffusion LPE Technology for PV Applications
New Concepts and Materials for Solar Power Conversion
NN10, Investigation on Activated Charcoal-Carbon Fabrics Composite Electrode Materials for Supercapacitor Application
NN1, Au-Molecule-GaAs Devices with Graphene Barrier Layer
NN2, Gap Mode Plasmonic Cavity with Coupled Organic Gain Medium
NN3, Conductance Statistics of Molecular Junctions Fabricated with a Large Array of Sub-10 nm Single-Grain Au Nanodots Electrodes
NN4, Surface Functionalization of Si Nanowires on SOI Substrates for Biosensing Applications
NN5, Switching Characteristics of Nonvolatile Organic Resistive Memory Devices with Interfacial Oxide Layers Tuned by O2 Plasma Treatment
NN6, Synthesis and Lithium Battery Applications of Nitrogen Doped Graphene Films
NN7, Conformal Coating of Thin Polymer Electrolyte Layer on Nanostructured Electrode Materials for 3D Battery Applications
NN8, Nanostructured Co3O4 Supercapacitors via Solution Precursor Plasma Spray
NN9, Performance of MnO2 Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode
O10, Characterization of Ultraviolet LEDs by Electrical Analysis and Laser-Based Failure Analysis Techniques
O1, Fabrication of UV Emitting Devices Using Vertical ZnO Nanorod Arrays on the p-GaN Films
O2, Low-Threshold ZnO Random Laser Diode Realized by Double Heterojunction Structure
O3, ZnMgO-Based Photodetectors for Short Wavelength and Light Polarization Detection
O4, Fabrication and Characterization of 265 nm Light Emitting Diodes on AlN Single Crystal Substrates
O5, Time-Resolved Photoluminescence of AlInN/AlN Multiple Quantum Well Active Regions for Mid-UV Emitters
O6, Enhanced Inter-Band Tunneling by Polarization Engineering in InGaN/GaN Quantum Wells
O7, Effects of Polarization Interface Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes
O8, Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN Layers by MOCVD for Photovoltaic Applications
O9, Carrier Lifetimes and Recombination Phenomena in InGaN/ GaN Quantum Dot and Quantum Well LEDs: A Comparative Study
P1, Memristance and Current-Driven Phase Transition in Multifunctional Binary Oxide Nanodevices
P2, Switching Characteristics and Mechanism of Nano-Scale Memristors Based on Epitaxial ZnO Nano-Islands
P3, Investigation of Multi-Barrier ZnO-Schottky Contacts
P4, Interface Charge Characteristics of HfO2/ZnO Thin Films
P5, Low-Temperature Processed Schottky-Gated Field-Effect Transistors Based on Amorphous Gallium-Indium-Zinc-Oxide
P6, High Pressure Hydrogen Annealing of Indium-Gallium-Zinc Oxide Thin Film Transistors
P7, The Effect of Ga Doping on Bias Stress Stability of ZnO TFT
P8, Electrically Stable Amorphous InGaZnO Thin-Film Transistors and High-Gain Inverters
P9, Growth and Investigation of Hexagonal Zinc Oxide Microdisk Resonators
Q10, Growth Studies on Quaternary AlInGaN Layers for HEMT Application
Q1, ALD Al2O3 Thickness-Dependent Study of AlN/GaN MOS-HEMTs
Q2, Al2O3 Based Etch-Stop Technology for the Gate Recess in N-Polar AlGaN/GaN MIS-HEMTs with SixNy Passivation
Q3, MBE Regrown Ohmic Contacts with Rc of 0.15 ohm-mm in InAlN/GaN High Electron Mobility Transistor
Q4, Pre- and Post-Treatment Investigations of Al Oxide by Atomic Layer Deposition in Schottky Metal/Al Oxide/AlGaN/GaN MOS Diodes
Q5, GaN/Diamond AlGaN/GaN/AlGaN DH-HEMT Produced by Epi-Inverted Wafer Processing
Q6, AlxIn1-xN/GaN Heterostructures Grown by MEMOCVD
Q7, Lateral Confinement of Electrons and Quasi-1D Channels Based Devices
Q8, Polarization-Engineered GaN-Based Heterostructure for Normally-Off High-Electron Mobility Transistors
Q9, Tunneling Current via Dislocations in AlGaN/GaN Schottky Contacts
R10, Growth of III-Sb VECSELs for High-Power Continuous Wave Operation
R1, Improved Performance of Long-Wave Infrared InAs/GaSb Strained Layer Superlattices Detectors by Novel ZnTe Passivation
R2, Strain-Engineered Binary and Ternary Type-II Superlattice Structures and Photodiodes Grown by Metalorganic Chemical Vapor Deposition
R3, Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response
R4, Increased Thermophotovoltaic Efficiencies Using a Two Dimensional Photonic Crystal Cavity
R5, Effect of Dislocation Density on Thermal Boundary Conductance across GaSb/GaAs Interfaces
R6, Low Field Electron Transport in Mixed Arsenide Antimonide Quantum-Well Heterostructures
R7, AlGaSb/InAs-Based Staggered Heterojunction Tunnel Diodes
R8, Growth and Characterization of AlInSb Metamorphic Buffers on GaSb and GaAs Substrates for the Growth of MWIR Lasers
R9, Optimization of MBE Growth for the Development of Mid-IR II-VI Quantum Cascade Lasers
S10, LATE NEWS: Two Coherent Limits in Core-Shell Semiconductor Nanowires
S1, Photoluminescence of Chemical Vapor Deposition-Grown Diamond Nanowires
S2, Properties of ErAs and ErSb Nanorods Embedded in High-Index III-V Semiconductors
S3, Dynamic Control of Growth Kinetics for Three-Dimensional Semiconductor Nano-Heterostructures
S4, Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD
S5, Control of III-V Nanowire Epitaxy by Precursor Chemistry
S6, LATE NEWS: Growth and Photoluminescence of GaP/GaNP Core/Shell Nanowires on Si(111) by Gas-Source Molecular Beam Epitaxy (GSMBE)
S7, Effect of Precursor Flow Rates on the Growth of InPSb Nanowires on InP(111)B
S8, Precise Placement and Diameter Control of Catalyst-Free Molecular Beam Epitaxy Grown GaN Nanowires
S9, Synthesis and Fabrication of ZnTe Nanosheet Field Effect Transistors for Photonic Applications
T1, Epitaxial Graphene Formation on Step-Free 4H-SiC(0001)
T2, Effects of Substrate Orientation and Growth Environment on the Structural and Electronic Properties of Epitaxial Graphene on SiC(0001)
T3, High Mobility Epitaxial Graphene on Sapphire via Metal-Free CVD
T4, Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
T5, Synthesis of a Pillared Graphene Nanostructure: A Three-Dimensional Hybrid Carbon Architecture
T6, Electrochemical Graphane Conversion Using E-beam Evaporated Metals for Catalytic Enhancement
T7, Highly Reproducible Growth of Carbon Nanotubes for Practical Applications in Electronics
T8, Graphene and Carbon Nanotube Growth in Vacuum Systems
U10, Highly Mismatched Oxide Alloy for Photovoltaic and Photoelectrochemical Applications
U1, Synthesis of Ge(1-x)Snx Alloy Thin Films Using Ion-Implantation and Pulsed Laser Melting (II-PLM)
U2, Nitrogen Ordering in Ga(NAs) at the Atomic Scale
U3, A Study of MBE Grown InSb1-xNx on GaAs for Long-Wavelength IR Applications
U4, Highly Mismatched GaN1-xAsx Alloys across the Entire Composition Range
U5, Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials
U6, Non-Monotonic Change/Variation in the Seebeck Coefficient of GaAs1-xNx Thin Film Thermoelectrics Due to the Addition of N (x = 0.5% to 1.5%)
U7, GaN1-xBix: Extremely Mismatched Alloys
U8, Electrical and Thermal Properties of InGaBixAs1-x
U9, Incorporation of Bismuth into GaAs and InAs Grown by Molecular-Beam Epitaxy
V1, Alkanethiol Island Formation on Single Crystal Zinc Oxide Surfaces
V2, Improved High Efficiency Organic Solar Cells via Incorporation of a Conjugated Polyelectrolyte Interlayer
V3, A Systematic Approach to Solvent Selection Based on Cohesive Energy Densities in a Molecular Bulk Heterojunction System
V4, Structure-Function-Property Relationships of Diketopyrrolopyrrole-Based Materials for Applications in Solution Processed Organic Solar Cells
V5, ALD-TiO2 to Enable Si as a Corrosion Resistant Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells
V6, Performance Optimization of Branched Nanowire Heterostructure-Based Photoelectrochemical Cells for Water Solar Splitting
V7, Layer-By-Layer Assembly of Light Harvesting Arrays for Molecular Based Solar Cells
V8, Low Temperature Fabrication of Hybrid Carbon Nanotube Gel as a Counter Electrode for Efficient Dye Sensitized Solar Cells
W10, LATE NEWS: Charge and Mobility Enhancements in Graded In-Polar InAlN/AlN/GaN Hetero-Junctions
W1, Shape Transformation of Nanoporous GaN by Annealing: Buried Cavities and Nanomembranes
W2, Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia
W3, Large-Area, Free Standing GaN by an Novel Nanoetching Process and Substrate Recycling
W4, Effect of Strain on Effective Masses in GaN and AlN
W5, Quasi Equilibrium Crystal Shapes and Kinetic Wulff Plots of Gallium Nitride Grown by Hydride Vapor Phase Epitaxy
W6, In Situ Stress Measurements during GaN Growth on Ion Implanted AlN/Si Substrates
W7, Effect of Indium Surfactant on N-Polar GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
W8, Schottky Barrier Height and Interface Chemistry for Metals Contacted to Low Dislocation Density AlGaN Grown on C-Oriented AlN Wafers
W9, Generation Mechanism of Threading Dislocations in Heteroepitaxial Growth of 2H-AlN on 6H-SiC (0001) Substrates
X10, Epitaxial LaAlO3/SrTiO3 Heterostructures by Atomic Layer Deposition
X1, Gate First In0.53Ga0.47As/Al2O3 MOSFETs with In-Situ Channel Surface Cleaning
X2, Structure of Electronic Defects near the SiC/SiO2 Interface
X3, Interface State Density for Positive Band Offset Dielectrics (Al2O3, SiO2) on GaN
X4, Comparison of Metal Deposition Methods by CV Analysis of ALD Al2O3 on In0.53Ga0.47As
X5, Passivation Effects of ALD Oxides on Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs
X6, Influence of Trimethylaluminium (TMA) Exposure on the Growth and Electrical Characteristics of HfO2/In0.53G0.47As Gate Stacks
X7, Investigation of Electrode Roughness and High-K Dielectric Barrier on Metal-Insulator-Metal Tunnel Diode Operation
X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide Thin-Film Transistors
Y10, Hydrogen-Related Cathodoluminescence in Mg-Doped GaN
Y1, The Influence of Al Composition on AlGaN Point Defect Incorporation
Y2, Hybrid Functional Calculations of DX Centers in AlN, GaN and AlGaN
Y3, Deep Traps in M-Plane GaN Grown by Ammonia MBE
Y4, Intrinsic Surface States and Dislocations at GaN(10-10) Surfaces Investigated by Scanning Tunneling Microscopy
Y5, Defect Characterization of InGaN Layer by Deep Level Transient and Optical Spectroscopies
Y6, Misfit Dislocation Formation in Partially Strain-Relaxed (11-22) Semipolar InGaN
Y7, Observation of m-Plane Slip and Relaxation Orthogonal to the Projected c-Direction in (20-21) InGaN/GaN Partially Relaxed Layers
Y8, Stress Mapping Analysis by Ray Tracing (SMART): A New Technique for Residual Strain/Stress Measurement of Single Crystal Material Using Synchrotron White Beam
Y9, Charged Basal Stacking Fault (BSF) Scattering in Wide Band-Gap Semiconductors
Z10, Ternary InxGa1-xAs Nanowires on Silicon Substrates: 1D Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
Z1, Growth of Epitaxially-Embedded ErAs Films in GaAs
Z2, Improved Conductivity of GaAs-Based Tunnel Junctions Containing ErAs Nanostructures via Compositional Grading
Z3, Photoluminescence from the Direct Bandgap of Ge1-xSnx Alloys Grown by Molecular Beam Epitaxy
Z4, Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn
Z5, Raman Study of Strained Ge1-xSnx Alloys
Z6, Study of Molecular Beam Epitaxial Grown HgCdSe for Infrared Applications
Z7, XMCD Measurement of Molecular Beam Epitaxy γ’-Fe4N Thin Films on LaAlO3(100) and MgO(100) Substrates
Z8, Sb Surfactant Use during GaInP and GaInAs Strain Relaxation
Z9, Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

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