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Meeting 2011 Electronic Materials Conference
Symposium 2011 Electronic Materials Conference
Presentation Title M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers
Author(s) Roy Chung, Erin C. Young, Dan Haeger, Steven P. DenBaars, James S. Speck, Dan Cohen
On-Site Speaker (Planned) Roy Chung
Abstract Scope Semipolar substrates offer a number of advantages for UV emitting AlGaInN based laser diodes, including higher gain, an ability to operate with nearly transverse electric (TE) optical modes, and an ability to provide pseudo-substrates with tailorable lattice constants, something unavailable from bulk c-plane AlN substrates. When high aluminum content buffer layers are grown on semipolar bulk GaN substrates, strain relaxation via glide of threading dislocations forestalls cracking, with the MD segments constrained to the heterointerface, allowing subsequent growth of laser quality material. Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N layers with 0.1 < x < 0.5 have been grown on (20-21) bulk GaN substrate by metal organic chemical vapor deposition (MOCVD). InGaN/GaN multiple quantum wells (MQW) were grown on top of 1.2 μm thick relaxed Al<SUB>0.22</SUB>GaN<SUB>0.78</SUB>N on (20-21) GaN and directly on GaN. While strained MQW on GaN clearly showed TDs from cathodoluminescence (CL), MQW on relaxed AlGaN showed dark lines, suggesting the generation of MDs and disappearance of TDs. As the aluminum composition in AlGaN increased, single Al<SUB>0.4</SUB>Ga<SUB>0.6</SUB>N layer started showing cracks along c-projection direction at about 300 nm. This could be due to too much strain and gliding of TDs is no loner enough to release the strain for high aluminum content AlGaN directly grown on GaN. We have also grown AlGaN on (20-21) GaN, step grading to higher aluminum composition. This allows relaxation of AlGaN without generation of new TDs, ultimately leading to high quality AlGaN template for laser diode growth. On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated with the presence of MDs. This is a clear indication of the relaxation of each AlGaN layer. When more than 1 μm thick Al<SUB>0.45</SUB>Ga<SUB>0.55</SUB>N layer was grown on the graded AlGaN, the crack healing was also observed. The diode operation of near UV light emitting diodes (λ~385 nm) on the relaxed buffer has been shown and is a promising result for device application of relaxed AlGaN template. In this study, we report on the growth of semipolar AlGaN with high aluminum content on bulk (20-21) semipolar GaN. Single AlGaN and step graded AlGaN layers were grown by MOCVD and characterized by various analytical techniques such as CL and x-ray diffraction to understand the relaxation mechanisms in semipolar AlGaN layer.
Proceedings Inclusion? Undecided

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

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R2, Strain-Engineered Binary and Ternary Type-II Superlattice Structures and Photodiodes Grown by Metalorganic Chemical Vapor Deposition
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S9, Synthesis and Fabrication of ZnTe Nanosheet Field Effect Transistors for Photonic Applications
T1, Epitaxial Graphene Formation on Step-Free 4H-SiC(0001)
T2, Effects of Substrate Orientation and Growth Environment on the Structural and Electronic Properties of Epitaxial Graphene on SiC(0001)
T3, High Mobility Epitaxial Graphene on Sapphire via Metal-Free CVD
T4, Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
T5, Synthesis of a Pillared Graphene Nanostructure: A Three-Dimensional Hybrid Carbon Architecture
T6, Electrochemical Graphane Conversion Using E-beam Evaporated Metals for Catalytic Enhancement
T7, Highly Reproducible Growth of Carbon Nanotubes for Practical Applications in Electronics
T8, Graphene and Carbon Nanotube Growth in Vacuum Systems
U10, Highly Mismatched Oxide Alloy for Photovoltaic and Photoelectrochemical Applications
U1, Synthesis of Ge(1-x)Snx Alloy Thin Films Using Ion-Implantation and Pulsed Laser Melting (II-PLM)
U2, Nitrogen Ordering in Ga(NAs) at the Atomic Scale
U3, A Study of MBE Grown InSb1-xNx on GaAs for Long-Wavelength IR Applications
U4, Highly Mismatched GaN1-xAsx Alloys across the Entire Composition Range
U5, Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials
U6, Non-Monotonic Change/Variation in the Seebeck Coefficient of GaAs1-xNx Thin Film Thermoelectrics Due to the Addition of N (x = 0.5% to 1.5%)
U7, GaN1-xBix: Extremely Mismatched Alloys
U8, Electrical and Thermal Properties of InGaBixAs1-x
U9, Incorporation of Bismuth into GaAs and InAs Grown by Molecular-Beam Epitaxy
V1, Alkanethiol Island Formation on Single Crystal Zinc Oxide Surfaces
V2, Improved High Efficiency Organic Solar Cells via Incorporation of a Conjugated Polyelectrolyte Interlayer
V3, A Systematic Approach to Solvent Selection Based on Cohesive Energy Densities in a Molecular Bulk Heterojunction System
V4, Structure-Function-Property Relationships of Diketopyrrolopyrrole-Based Materials for Applications in Solution Processed Organic Solar Cells
V5, ALD-TiO2 to Enable Si as a Corrosion Resistant Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells
V6, Performance Optimization of Branched Nanowire Heterostructure-Based Photoelectrochemical Cells for Water Solar Splitting
V7, Layer-By-Layer Assembly of Light Harvesting Arrays for Molecular Based Solar Cells
V8, Low Temperature Fabrication of Hybrid Carbon Nanotube Gel as a Counter Electrode for Efficient Dye Sensitized Solar Cells
W10, LATE NEWS: Charge and Mobility Enhancements in Graded In-Polar InAlN/AlN/GaN Hetero-Junctions
W1, Shape Transformation of Nanoporous GaN by Annealing: Buried Cavities and Nanomembranes
W2, Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia
W3, Large-Area, Free Standing GaN by an Novel Nanoetching Process and Substrate Recycling
W4, Effect of Strain on Effective Masses in GaN and AlN
W5, Quasi Equilibrium Crystal Shapes and Kinetic Wulff Plots of Gallium Nitride Grown by Hydride Vapor Phase Epitaxy
W6, In Situ Stress Measurements during GaN Growth on Ion Implanted AlN/Si Substrates
W7, Effect of Indium Surfactant on N-Polar GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
W8, Schottky Barrier Height and Interface Chemistry for Metals Contacted to Low Dislocation Density AlGaN Grown on C-Oriented AlN Wafers
W9, Generation Mechanism of Threading Dislocations in Heteroepitaxial Growth of 2H-AlN on 6H-SiC (0001) Substrates
X10, Epitaxial LaAlO3/SrTiO3 Heterostructures by Atomic Layer Deposition
X1, Gate First In0.53Ga0.47As/Al2O3 MOSFETs with In-Situ Channel Surface Cleaning
X2, Structure of Electronic Defects near the SiC/SiO2 Interface
X3, Interface State Density for Positive Band Offset Dielectrics (Al2O3, SiO2) on GaN
X4, Comparison of Metal Deposition Methods by CV Analysis of ALD Al2O3 on In0.53Ga0.47As
X5, Passivation Effects of ALD Oxides on Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs
X6, Influence of Trimethylaluminium (TMA) Exposure on the Growth and Electrical Characteristics of HfO2/In0.53G0.47As Gate Stacks
X7, Investigation of Electrode Roughness and High-K Dielectric Barrier on Metal-Insulator-Metal Tunnel Diode Operation
X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide Thin-Film Transistors
Y10, Hydrogen-Related Cathodoluminescence in Mg-Doped GaN
Y1, The Influence of Al Composition on AlGaN Point Defect Incorporation
Y2, Hybrid Functional Calculations of DX Centers in AlN, GaN and AlGaN
Y3, Deep Traps in M-Plane GaN Grown by Ammonia MBE
Y4, Intrinsic Surface States and Dislocations at GaN(10-10) Surfaces Investigated by Scanning Tunneling Microscopy
Y5, Defect Characterization of InGaN Layer by Deep Level Transient and Optical Spectroscopies
Y6, Misfit Dislocation Formation in Partially Strain-Relaxed (11-22) Semipolar InGaN
Y7, Observation of m-Plane Slip and Relaxation Orthogonal to the Projected c-Direction in (20-21) InGaN/GaN Partially Relaxed Layers
Y8, Stress Mapping Analysis by Ray Tracing (SMART): A New Technique for Residual Strain/Stress Measurement of Single Crystal Material Using Synchrotron White Beam
Y9, Charged Basal Stacking Fault (BSF) Scattering in Wide Band-Gap Semiconductors
Z10, Ternary InxGa1-xAs Nanowires on Silicon Substrates: 1D Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
Z1, Growth of Epitaxially-Embedded ErAs Films in GaAs
Z2, Improved Conductivity of GaAs-Based Tunnel Junctions Containing ErAs Nanostructures via Compositional Grading
Z3, Photoluminescence from the Direct Bandgap of Ge1-xSnx Alloys Grown by Molecular Beam Epitaxy
Z4, Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn
Z5, Raman Study of Strained Ge1-xSnx Alloys
Z6, Study of Molecular Beam Epitaxial Grown HgCdSe for Infrared Applications
Z7, XMCD Measurement of Molecular Beam Epitaxy γ’-Fe4N Thin Films on LaAlO3(100) and MgO(100) Substrates
Z8, Sb Surfactant Use during GaInP and GaInAs Strain Relaxation
Z9, Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

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