|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films and Coatings
||Harvesting Light from Crystalline-Silicon via Processing Of Stressed Interface with Sol-Gel Based Silica
||Sufian Abedrabbo, Anthony T. Fiory, Nuggehalli M Ravindra
|On-Site Speaker (Planned)
Emission of band-gap photons at 1.1 eV has been observed by photoluminescence from crystalline silicon that is stressed by deposition and thermal curing of sol-gel-based silica. The emission is noted to be two orders of magnitude greater relative to unperturbed silicon. Effect of stresses and strains on the radiative recombination in Czochralski (CZ) silicon samples, at the band-gap, are postulated and quantification of the stress and strain modulation of the band-gap is presented. Analytical characterization of the samples indicates high optical activity in defect-free Si that is shown to be reversible. Simplicity of involved processes suggests the possibility of integrating with Si-based integrated circuits for the next generation optoelectronics and examples of Si-based photonics are discussed.
||Planned: A print-only volume